上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDMC7672MOSFET N-CH 30V 16.9A/20A 8MLP Fairchild Semiconductor |
9,009 | - |
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规格书 |
PowerTrench®, SyncFET™ | 8-PowerWDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16.9A (Ta), 20A (Tc) | 4.5V, 10V | 5.7mOhm @ 16.9A, 10V | 3V @ 250µA | 57 nC @ 10 V | ±20V | 3890 pF @ 15 V | - | 2.3W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-MLP (3.3x3.3) |
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FDD8878POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |
30,452 | - |
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规格书 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta), 40A (Tc) | 4.5V, 10V | 15mOhm @ 35A, 10V | 2.5V @ 250µA | 26 nC @ 10 V | ±20V | 880 pF @ 15 V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FDD6612APOWER FIELD-EFFECT TRANSISTOR, 9 Fairchild Semiconductor |
208,779 | - |
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规格书 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.5A (Ta), 30A (Tc) | 4.5V, 10V | 20mOhm @ 9.5A, 10V | 3V @ 250µA | 9.4 nC @ 5 V | ±20V | 660 pF @ 15 V | - | 2.8W (Ta), 36W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FDS8876MOSFET N-CH 30V 12.5A 8SOIC Fairchild Semiconductor |
1,312 | - |
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规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12.5A (Ta) | 4.5V, 10V | 8.2mOhm @ 12.5A, 10V | 2.5V @ 250µA | 36 nC @ 10 V | ±20V | 1650 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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FDD8782POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |
119,700 | - |
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规格书 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 35A (Tc) | 4.5V, 10V | 11mOhm @ 35A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 1220 pF @ 13 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FDD8882POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |
2,490 | - |
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规格书 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12.6A (Ta), 55A (Tc) | 4.5V, 10V | 11.5mOhm @ 35A, 10V | 2.5V @ 250µA | 33 nC @ 10 V | ±20V | 1260 pF @ 15 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FDS8449-GFDS8449 - 40V MOSFET N CHANNEL Fairchild Semiconductor |
1,646 | - |
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规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 7.6A (Ta) | 4.5V, 10V | 29mOhm @ 7.6A, 10V | 3V @ 250µA | 11 nC @ 5 V | ±20V | 760 pF @ 20 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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FDS6298POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
244,466 | - |
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规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 9mOhm @ 13A, 10V | 3V @ 250µA | 14 nC @ 5 V | ±20V | 1108 pF @ 15 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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FDMS7672POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
3,000 | - |
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规格书 |
PowerTrench® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta), 28A (Tc) | 4.5V, 10V | 5mOhm @ 19A, 10V | 3V @ 250µA | 44 nC @ 10 V | ±20V | 2960 pF @ 15 V | - | 2.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Power56 |
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NDP4050NDP4050 - 15A, 50V, 0.1OHM, N-CH Fairchild Semiconductor |
1,980 | - |
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规格书 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 15A (Tc) | - | 100mOhm @ 7.5A, 10V | 4V @ 250µA | 17 nC @ 10 V | - | 450 pF @ 25 V | - | - | - | - | - | Through Hole | TO-220-3 |
