上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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HUF75852G3MOSFET N-CH 150V 75A TO247-3 Fairchild Semiconductor |
266 | - |
|
规格书 |
UltraFET™ | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 75A (Tc) | 10V | 16mOhm @ 75A, 10V | 4V @ 250µA | 480 nC @ 20 V | ±20V | 7690 pF @ 25 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
FCH041N65FN-CHANNEL, MOSFET Fairchild Semiconductor |
450 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FCH041N65EFN-CHANNEL, MOSFET Fairchild Semiconductor |
310 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FCH47N60NPOWER FIELD-EFFECT TRANSISTOR, 4 Fairchild Semiconductor |
845 | - |
|
规格书 |
SupreMOS™ | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 62mOhm @ 23.5A, 10V | 4V @ 250µA | 151 nC @ 10 V | ±30V | 6700 pF @ 100 V | - | 368W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
FDA2712MOSFET N-CH 250V 64A TO3PN Fairchild Semiconductor |
2,332 | - |
|
规格书 |
UltraFET™ | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 64A (Tc) | 10V | 34mOhm @ 40A, 10V | 5V @ 250µA | 129 nC @ 10 V | ±30V | 10175 pF @ 25 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PN |
|
FCH47N60F-F085N-CHANNEL MOSFET 600V, 47A Fairchild Semiconductor |
397 | - |
|
规格书 |
SuperFET™ | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 75mOhm @ 47A, 10V | 5V @ 250µA | 250 nC @ 10 V | ±30V | 8000 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
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FCH76N60NPOWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor |
170 | - |
|
规格书 |
SupreMOS™ | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 76A (Tc) | 10V | 36mOhm @ 38A, 10V | 4V @ 250µA | 285 nC @ 10 V | ±30V | 12385 pF @ 100 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
HUFA75329G3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,700 | - |
|
规格书 |
UltraFET® | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 49A (Tc) | 10V | 24mOhm @ 49A, 10V | 4V @ 250µA | 75 nC @ 20 V | ±20V | 1060 pF @ 25 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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FDZ451PZSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
9,569 | - |
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规格书 |
PowerTrench® | 4-XFBGA, WLCSP | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.6A (Ta) | 1.5V, 4.5V | 140mOhm @ 2A, 4.5V | 1.2V @ 250µA | 8.8 nC @ 4.5 V | ±8V | 555 pF @ 10 V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-WLCSP (0.8x0.8) |
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NTNS4CS69NTCGNTNS4CS69NTCG - TRENCH 6 30V NFE Fairchild Semiconductor |
228,155 | - |
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- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
