上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STP3NK90ZMOSFET N-CH 900V 3A TO220AB STMicroelectronics |
52 | - |
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规格书 |
SuperMESH™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 3A (Tc) | 10V | 4.8Ohm @ 1.5A, 10V | 4.5V @ 50µA | 22.7 nC @ 10 V | ±30V | 590 pF @ 25 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STP100N10F7MOSFET N CH 100V 80A TO-220 STMicroelectronics |
40 | - |
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规格书 |
DeepGATE™, STripFET™ VII | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 10V | 8mOhm @ 40A, 10V | 4.5V @ 250µA | 61 nC @ 10 V | ±20V | 4369 pF @ 50 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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STW26NM60NN-channel 600 V, 0.135 Ohm typ., STMicroelectronics |
68 | - |
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规格书 |
MDmesh™ II | TO-247-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 165mOhm @ 10A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±30V | 1800 pF @ 50 V | - | 140W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW26NM50MOSFET N-CH 500V 30A TO247-3 STMicroelectronics |
57 | - |
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规格书 |
MDmesh™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 120mOhm @ 13A, 10V | 5V @ 250µA | 106 nC @ 10 V | ±30V | 3000 pF @ 25 V | - | 313W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STE145N65M5MOSFET N-CH 650V 143A ISOTOP STMicroelectronics |
88 | - |
|
规格书 |
MDmesh™ V | ISOTOP | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 143A (Tc) | 10V | 15mOhm @ 69A, 10V | 5V @ 250µA | 414 nC @ 10 V | ±25V | 18500 pF @ 100 V | - | 679W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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STL3N10F7MOSFET N-CH 100V 4A POWERFLAT STMicroelectronics |
822 | - |
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规格书 |
DeepGATE™, STripFET™ VII | 6-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 4A (Tc) | 10V | 70mOhm @ 2A, 10V | 4.5V @ 250µA | 7.8 nC @ 10 V | ±20V | 408 pF @ 25 V | - | 2.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (2x2) |
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STP100N6F7MOSFET N-CH 60V 100A TO220 STMicroelectronics |
67 | - |
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规格书 |
STripFET™ F7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 5.6mOhm @ 50A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 1980 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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STB30NF10T4MOSFET N-CH 100V 35A D2PAK STMicroelectronics |
1,027 | - |
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规格书 |
STripFET™ II | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 10V | 45mOhm @ 15A, 10V | 4V @ 250µA | 55 nC @ 10 V | ±20V | 1180 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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STP140N6F7MOSFET N-CH 60V 80A TO220 STMicroelectronics |
27 | - |
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规格书 |
STripFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 3.5mOhm @ 40A, 10V | 4V @ 250µA | 55 nC @ 10 V | ±20V | 3100 pF @ 10 V | - | 158W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-220 |
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STF25N60M2-EPMOSFET N-CH 600V 18A TO220FP STMicroelectronics |
47 | - |
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规格书 |
MDmesh™ M2-EP | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 188mOhm @ 9A, 10V | 4.75V @ 250µA | 29 nC @ 10 V | ±25V | 1090 pF @ 100 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
