上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STO67N60DM6MOSFET N-CH 600V 33A TOLL STMicroelectronics |
728 | - |
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规格书 |
MDmesh™ DM6 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 59mOhm @ 23.75A, 10V | 4.75V @ 250µA | 72.5 nC @ 10 V | ±25V | 3400 pF @ 100 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TOLL (HV) |
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STH400N4F6-2MOSFET N-CH 40V 180A H2PAK-2 STMicroelectronics |
943 | - |
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规格书 |
DeepGATE™, STripFET™ VI | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 10V | 1.15mOhm @ 60A, 10V | 4.5V @ 250µA | 404 nC @ 10 V | ±20V | 20500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-2 |
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STFI40N60M2MOSFET N-CH 600V 34A I2PAKFP STMicroelectronics |
168 | - |
|
规格书 |
MDmesh™ II Plus | TO-262-3 Full Pack, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 88mOhm @ 17A, 10V | 4V @ 250µA | 57 nC @ 10 V | ±25V | 2500 pF @ 100 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-281 (I2PAKFP) |
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STF28NM60NDMOSFET N-CH 600V 23A TO220FP STMicroelectronics |
935 | - |
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规格书 |
FDmesh™ II | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 150mOhm @ 11.5A, 10V | 5V @ 250µA | 62.5 nC @ 10 V | ±25V | 2090 pF @ 100 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STWA45N65M5MOSFET N-CH 650V 35A TO247 STMicroelectronics |
339 | - |
|
规格书 |
MDmesh™ V | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 78mOhm @ 17.5A, 10V | 5V @ 250µA | 82 nC @ 10 V | ±25V | 3470 pF @ 100 V | - | 210W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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STW30NM50NMOSFET N-CH 500V 27A TO247-3 STMicroelectronics |
222 | - |
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规格书 |
MDmesh™ II | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 27A (Tc) | 10V | 115mOhm @ 13.5A, 10V | 4V @ 250µA | 94 nC @ 10 V | ±25V | 2740 pF @ 50 V | - | 190W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW60N65M5MOSFET N-CH 650V 46A TO247 STMicroelectronics |
575 | - |
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规格书 |
MDmesh™ V | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 46A (Tc) | 10V | 59mOhm @ 23A, 10V | 5V @ 250µA | 139 nC @ 10 V | ±25V | 6810 pF @ 100 V | - | 255W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW32N65M5MOSFET N-CH 650V 24A TO247-3 STMicroelectronics |
506 | - |
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规格书 |
MDmesh™ V | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 119mOhm @ 12A, 10V | 5V @ 250µA | 72 nC @ 10 V | ±25V | 3320 pF @ 100 V | - | 150W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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SCTWA10N120IC POWER MOSFET 1200V HIP247 STMicroelectronics |
499 | - |
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规格书 |
- | TO-247-3 | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 12A (Tc) | 20V | 690mOhm @ 6A, 20V | 3.5V @ 250µA (Typ) | 21 nC @ 20 V | +25V, -10V | 300 pF @ 1000 V | - | 110W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | HiP247™ Long Leads |
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STW56N65DM2MOSFET N-CH 650V 48A TO247 STMicroelectronics |
925 | - |
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规格书 |
MDmesh™ DM2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 48A (Tc) | 10V | 65mOhm @ 24A, 10V | 5V @ 250µA | 88 nC @ 10 V | ±25V | 4100 pF @ 100 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
