上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STF80N600K6N-CHANNEL 800 V, 515 MOHM TYP., STMicroelectronics |
26 | - |
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规格书 |
ECOPACK® | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 100µA | 10.7 nC @ 10 V | ±30V | 540 pF @ 400 V | - | 23W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
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SCT055TO65G3SILICON CARBIDE POWER MOSFET 650 STMicroelectronics |
88 | - |
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规格书 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STW65N045M9-4N-CHANNEL 650 V, 39 MOHM TYP., 5 STMicroelectronics |
90 | - |
|
规格书 |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 54A (Tc) | 10V | 45mOhm @ 28A, 10V | 4.2V @ 250µA | 80 nC @ 10 V | ±30V | 4610 pF @ 400 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
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SCT040TO65G3SILICON CARBIDE POWER MOSFET 650 STMicroelectronics |
100 | - |
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规格书 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SCT040W65G3-4AGAUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics |
75 | - |
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规格书 |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SCT027H65G3AGAUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics |
100 | - |
|
规格书 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SCT040W120G3AGHIP-247 IN LINE HEAT SINK 2MM STMicroelectronics |
100 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 15V, 18V | 54mOhm @ 16A, 18V | 4.2V @ 5mA | 56 nC @ 18 V | +22V, -10V | 1329 pF @ 800 V | - | 312W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | HiP247™ |
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STW65N023M9-4N-CHANNEL 650 V, 19.9 MOHM TYP., STMicroelectronics |
59 | - |
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规格书 |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 95A (Tc) | 10V | 23mOhm @ 48A, 10V | 4.2V @ 250µA | 230 nC @ 10 V | ±30V | 8844 pF @ 400 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
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SCT025H120G3AGAUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics |
85 | - |
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规格书 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SCT018H65G3AGH2PAK-7 STMicroelectronics |
100 | - |
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规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 55A (Tc) | 15V, 18V | 27mOhm @ 30A, 18V | 4.2V @ 5mA | 79.4 nC @ 18 V | +22V, -10V | 2124 pF @ 400 V | - | 385W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-7 |
