制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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FDS9435A-NBAD008-30V P-CHANNEL POWERTRENCH MOSFE onsemi |
1,625,000 | - |
|
- |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 30 V | 5.3A (Ta) | 4.5V, 10V | 50mOhm @ 5.3A, 10V | 3V @ 250µA | 14 nC @ 10 V | ±25V | 528 pF @ 15 V | - | 1W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-SOIC |
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2SK3704-1EXMOSFET N-CH onsemi |
3,050 | - |
|
![]() 规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NTMFS4931NT1G-IRH1NTMFS4931 - MOSFET N CHANNEL SIN onsemi |
4,947 | - |
|
![]() 规格书 |
- | 8-PowerTDFN, 5 Leads | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Ta) | 4.5V, 10V | 1.1mOhm @ 30A, 10V | 2.2V @ 250µA | 128 nC @ 10 V | ±20V | 9821 pF @ 15 V | - | 950mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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BXL4004-1EBXL4004 - N-CHANNEL POWER MOSFET onsemi |
500 | - |
|
![]() 规格书 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Ta) | 4.5V, 10V | 3.9mOhm @ 50A, 10V | - | 140 nC @ 10 V | ±20V | 8200 pF @ 20 V | - | 75W (Tc) | 150°C | - | - | Through Hole | TO-220-3 |
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2SK3415LS2SK3415LS - MOSFET 40A, 60V, 0. onsemi |
2,000 | - |
|
![]() 规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NTP6413ANGPOWER MOSFET 100V 42A, SINGLE N- onsemi |
1,085 | - |
|
![]() 规格书 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 10V | 28mOhm @ 42A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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2SK2632LS-CB112SK2632 - 2.5A, 800V, 4.8OHM, N- onsemi |
300 | - |
|
![]() 规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NTMFS0D55N03CGT1G-01MOSFET N-CHANNEL 30V 35A (TA) 1. onsemi |
1,548,000 | - |
|
- |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Ta), 462A (Tc) | 10V | 0.58mOhm @ 30A, 10V | 2.2V @ 330µA | 224.9 nC @ 10 V | ±20V | 18500 pF @ 15 V | - | 1.1W (Ta), 199W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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FQP16N25C-F105FQP16N25 - POWER FIELD-EFFECT TR onsemi |
15,000 | - |
|
- |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDMC7572SPOWER FIELD-EFFECT TRANSISTOR, 2 onsemi |
2,608 | - |
|
![]() 规格书 |
PowerTrench®, SyncFET™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 22.5A (Ta), 40A (Tc) | 4.5V, 10V | 3.15mOhm @ 22.5A, 10V | 3V @ 1mA | 44 nC @ 10 V | ±20V | 2705 pF @ 13 V | - | 2.3W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Power33 |