上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NTD3055L170T4GPower Field-Effect Transistor, 9 onsemi |
574 | - |
|
- |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 9A (Ta) | 5V | 170mOhm @ 4.5A, 5V | 2V @ 250µA | 10 nC @ 5 V | ±15V | 275 pF @ 25 V | - | 1.5W (Ta) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DPAK |
|
NVB5405NT4GNVB5405 - SINGLE N-CHANNEL POWER onsemi |
5,600 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 16.5A (Ta), 116A (Tc) | 5V, 10V | 5.8mOhm @ 40A, 10V | 3.5V @ 250µA | 88 nC @ 10 V | ±20V | 4000 pF @ 32 V | - | 3W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
2SK4084LS2SK4084LS - MOSFET, T14A, 500V, onsemi |
941 | - |
|
规格书 |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 9.6A (Tc) | - | 520mOhm @ 7A, 10V | - | 38.4 nC @ 10 V | - | 1000 pF @ 30 V | - | 2W (Ta), 37W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FI(LS) |
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FDMS3006SDCPOWER FIELD-EFFECT TRANSISTOR, 3 onsemi |
3,000 | - |
|
规格书 |
Dual Cool™, PowerTrench®, SyncFET™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 34A (Ta) | 4.5V, 10V | 1.9mOhm @ 30A, 10V | 3V @ 1mA | 80 nC @ 10 V | ±20V | 5725 pF @ 15 V | - | 3.3W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Dual Cool™56 |
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NTD5C446NT4GNTD5C446 - SINGLE N-CHANNEL POWE onsemi |
188,187 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 4V @ 250µA | 34.3 nC @ 10 V | ±20V | 2300 pF @ 20 V | - | 66W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
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FQA7N80C-F109POWER MOSFET, N-CHANNEL, QFET, 8 onsemi |
14,140 | - |
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规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FQB25N33TM-F085OSCTPower Field-Effect Transistor, 2 onsemi |
336 | - |
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规格书 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FCP165N65S3POWER MOSFET, N-CHANNEL, SUPERFE onsemi |
16,726 | - |
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规格书 |
SuperFET® III | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 19A (Tc) | 10V | 165mOhm @ 9.5A, 10V | 4.5V @ 1.9mA | 39 nC @ 10 V | ±30V | 1500 pF @ 400 V | - | 154W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FCP21N60NFCP21N60 - N-CHANNEL, MOSFET onsemi |
6,400 | - |
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规格书 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 |
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2SK4065-DL-1EX2SK4065 - MOSFET N-CHANNEL 75V T onsemi |
3,140 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Ta) | - | 6mOhm @ 50A, 10V | - | 220 nC @ 10 V | - | 12200 pF @ 20 V | - | 1.65W (Ta), 90W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-263-2 |
