| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDS8878-F123N-CHANNEL POWERTRENCH MOSFET 30V onsemi |
12,896 | - |
|
规格书 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SFT1342-E-60 V, -12 A, 62 MILLI OHM SINGL onsemi |
18,739 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Ta) | 4V, 10V | 62mOhm @ 6A, 10V | 2.6V @ 1mA | 26 nC @ 10 V | ±20V | 1150 pF @ 20 V | - | 15W (Tc) | 150°C (TJ) | - | - | Through Hole | IPAK/TP |
|
FDFS2P753ZPOWER FIELD-EFFECT TRANSISTOR, 3 onsemi |
5,825 | - |
|
规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 3A (Ta) | - | 115mOhm @ 3A, 10V | 3V @ 250µA | 9.3 nC @ 10 V | ±25V | 455 pF @ 10 V | Schottky Diode (Isolated) | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
SFT1443-WMOSFET N-CH 100V 9A IPAK onsemi |
4,900 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9A (Ta) | 4V, 10V | 225mOhm @ 3A, 10V | 2.6V @ 1mA | 9.8 nC @ 10 V | ±20V | 490 pF @ 20 V | - | 1W (Ta), 19W (Tc) | 150°C (TJ) | - | - | Through Hole | IPAK/TP |
|
2SJ632-M-TD-E2SJ632 - P-CHANNEL SILICON MOSFE onsemi |
47,000 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NTND1K5N021ZTAG2MDUCHANNEL onsemi |
8,000 | - |
|
规格书 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SFT1446-HMOSFET N-CH 60V 20A TP onsemi |
2,000 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Ta) | 4V, 10V | 51mOhm @ 10A, 10V | 2.6V @ 1mA | 16 nC @ 10 V | ±20V | 750 pF @ 20 V | - | 1W (Ta), 23W (Tc) | 150°C (TJ) | - | - | Through Hole | IPAK/TP |
|
ECH8656-TL-HPOWER FIELD-EFFECT TRANSISTOR onsemi |
84,000 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FDS8876-F4030V N-CHANNEL POWERTRENCH MOSFET onsemi |
27,500 | - |
|
- |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12.5A (Ta) | 4.5V, 10V | 8.2mOhm @ 12.5A, 10V | 2.5V @ 250µA | 36 nC @ 10 V | ±20V | 1650 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FDPC1012S-PFDPC102ASYMMETRDUN-CHANNMOSFET onsemi |
9,797 | - |
|
规格书 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
