上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SK4065-DL-1EN-CHANNEL POWER MOSFET, 75V, 100 onsemi |
202 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Ta) | 4V, 10V | 6mOhm @ 50A, 10V | - | 220 nC @ 10 V | ±20V | 12200 pF @ 20 V | - | 1.65W (Ta), 90W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-263-2 |
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FCPF20N60TPOWER MOSFET, N-CHANNEL, SUPERFE onsemi |
1,000 | - |
|
规格书 |
SuperFET™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 3080 pF @ 25 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
NTMFS4C805NT1GTRENCH 6 30V NCH onsemi |
6,000 | - |
|
- |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.9A (Ta) | 4.5V, 10V | 2.8mOhm @ 30A, 10V | 2.2V @ 250µA | 30 nC @ 10 V | ±20V | 1972 pF @ 15 V | - | 770mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
|
2SK14492SK1449 - N-CHANNEL SILICON MOSF onsemi |
775 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDMF6808NDRMOS MODULE onsemi |
3,000 | - |
|
- |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
MT9M131C12STC-MI-DRCMOS IMAGE SENSOR SYSTEM-ON-CHIP onsemi |
3,040 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FDD8444MOSFET N-CH 40V 145A TO252AA onsemi |
334 | - |
|
规格书 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 145A (Tc) | 10V | 5.2mOhm @ 50A, 10V | 4V @ 250µA | 116 nC @ 10 V | ±20V | 6195 pF @ 25 V | - | 153W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
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NVMFS3D0P04M8LT1GMV8 P INITIAL PROGRAM onsemi |
70 | - |
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规格书 |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 28A (Ta), 183A (Tc) | 4.5V, 10V | 2.7mOhm @ 30A,10V | 2.4V @ 2mA | 124 nC @ 10 V | ±20V | 5827 pF @ 20 V | - | 3.9W (Ta), 171W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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NVH4L018N075SC1SIC MOS TO247-4L 750V onsemi |
62 | - |
|
规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 140A (Tc) | 15V, 18V | 18mOhm @ 66A, 18V | 4.3V @ 22mA | 262 nC @ 18 V | +22V, -8V | 5010 pF @ 375 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
2N7002WT1GMOSFET N-CH 60V 310MA SC70-3 onsemi |
482 | - |
|
规格书 |
- | SC-70, SOT-323 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 310mA (Ta) | 4.5V, 10V | 1.6Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.7 nC @ 4.5 V | ±20V | 24.5 pF @ 20 V | - | 280mW (Tj) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SC-70-3 (SOT323) |
