上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQPF19N10POWER FIELD-EFFECT TRANSISTOR, 1 onsemi |
2,860 | - |
|
规格书 |
QFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 13.6A (Tc) | 10V | 100mOhm @ 6.8A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±25V | 780 pF @ 25 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
NTMFS4C054NT1GNTMFS4C054 - SINGLE N-CHANNEL PO onsemi |
7,594 | - |
|
规格书 |
- | 8-PowerTDFN, 5 Leads | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22.5A (Ta), 80A (Tc) | 4.5V, 10V | 2.54mOhm @ 30A, 10V | 2.2V @ 250µA | 32.5 nC @ 10 V | ±20V | 2300 pF @ 15 V | - | 2.59W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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FDM6296-GFDM6296 - TBD_25CH onsemi |
12,000 | - |
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规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NTD4N60T4TRANS MOSFET N-CH 600V 4A 3-PIN( onsemi |
7,138 | - |
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规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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2SK3615-E2SK3615 - N-CHANNEL SILICON MOSF onsemi |
3,000 | - |
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规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FDMC867616A, 30V, 0.0059OHM, N-CHANNEL P onsemi |
15,000 | - |
|
规格书 |
PowerTrench® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta), 18A (Tc) | 4.5V, 10V | 5.9mOhm @ 14.7A, 10V | 3V @ 250µA | 30 nC @ 10 V | ±20V | 1935 pF @ 15 V | - | 2.3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Power33 |
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FCD5N60-F085FCD5N60_F085 - N-CHANNEL SUPERFE onsemi |
4,800 | - |
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规格书 |
SuperFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.6A (Tc) | 10V | 1.1Ohm @ 4.6A, 10V | 5V @ 250µA | 21 nC @ 10 V | ±30V | 570 pF @ 25 V | - | 54W (Tj) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
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2SJ634-TL-E2SJ634 - PCH 4V DRIVE SERIES onsemi |
7,000 | - |
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDS6685-NBCM003AP-CHANNEL LOGIC LEVEL POWERTRENC onsemi |
12,500 | - |
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PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 8.8A (Ta) | 4.5V, 10V | 20mOhm @ 8.8A, 10V | 3V @ 250µA | 24 nC @ 5 V | ±25V | 1604 pF @ 15 V | - | 1W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-SOIC |
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FDPF5N50NZFPOWER FIELD-EFFECT TRANSISTOR, 4 onsemi |
12,685 | - |
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规格书 |
UniFET-II™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.2A (Tc) | 10V | 1.75Ohm @ 2.1A, 10V | 5V @ 250µA | 12 nC @ 10 V | ±25V | 485 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
