上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TP2535N3-GMOSFET P-CH 350V 86MA TO92-3 Microchip Technology |
678 | - |
|
规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bag | Active | P-Channel | MOSFET (Metal Oxide) | 350 V | 86mA (Tj) | 4.5V, 10V | 25Ohm @ 100mA, 10V | 2.4V @ 1mA | - | ±20V | 125 pF @ 25 V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
TP2435N8-GMOSFET P-CH 350V 231MA TO243AA Microchip Technology |
3,903 | - |
|
规格书 |
- | TO-243AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 350 V | 231mA (Tj) | 3V, 10V | 15Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 200 pF @ 25 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-243AA (SOT-89) |
|
MSC360SMA120SMOSFET SIC 1200 V 360 MOHM TO-26 Microchip Technology |
205 | - |
|
规格书 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
APT60M75L2LLGMOSFET N-CH 600V 73A 264 MAX Microchip Technology |
210 | - |
|
规格书 |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 73A (Tc) | 10V | 75mOhm @ 36.5A, 10V | 5V @ 5mA | 195 nC @ 10 V | ±30V | 8930 pF @ 25 V | - | 893W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 264 MAX™ [L2] |
|
MSC035SMA070BMOSFET N-CH 700V TO247 Microchip Technology |
85 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 77A (Tc) | 20V | 44mOhm @ 30A, 20V | 2.7V @ 2mA | 99 nC @ 20 V | +25V, -10V | 2010 pF @ 700 V | - | 283W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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MSC035SMA170BMOSFET SIC 1700 V 45 MOHM TO-247 Microchip Technology |
37 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 68A (Tc) | 20V | 45mOhm @ 30A, 20V | 3.25V @ 2.5mA (Typ) | 178 nC @ 20 V | +23V, -10V | 3300 pF @ 1000 V | - | 370W (Tc) | -60°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
MSC040SMA120JSICFET N-CH 1200V 53A SOT227 Microchip Technology |
50 | - |
|
规格书 |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 53A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.8V @ 1mA | 137 nC @ 20 V | +25V, -10V | 1990 pF @ 1000 V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
|
MSC035SMA170B4MOSFET SIC 1700V 35 MOHM TO-247- Microchip Technology |
90 | - |
|
规格书 |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 68A (Tc) | 20V | 45mOhm @ 30A, 20V | 3.25V @ 2.5mA (Typ) | 178 nC @ 20 V | +23V, -10V | 3300 pF @ 1000 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
APT50M65JFLLMOSFET N-CH 500V 58A ISOTOP Microchip Technology |
53 | - |
|
规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 29A, 10V | 5V @ 2.5mA | 141 nC @ 10 V | ±30V | 7010 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
MSC130SM120JCU2SICFET N-CH 1.2KV 173A SOT227 Microchip Technology |
3 | - |
|
规格书 |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 173A (Tc) | 20V | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464 nC @ 20 V | +25V, -10V | 6040 pF @ 1000 V | - | 745W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
