上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT12040JVRMOSFET N-CH 1200V 26A SOT227 Microchip Technology |
43 | - |
|
规格书 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 26A (Tc) | 10V | 400mOhm @ 13A, 10V | 4V @ 5mA | 1200 nC @ 10 V | ±30V | 18000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
|
MSCSM120SKM31CTBL1NGPM-MOSFET-SIC-SBD-BL1 Microchip Technology |
31 | - |
|
规格书 |
- | Module | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 79A | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232 nC @ 20 V | +25V, -10V | 3020 pF @ 1000 V | - | 310W | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
,TO-226_straightlead.jpg)
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VN2222LL-G-P003MOSFET N-CH 60V 230MA TO92-3 Microchip Technology |
2,004 | - |
|
规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 230mA (Tj) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60 pF @ 25 V | - | 400mW (Ta), 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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DN2535N3-G-P003MOSFET N-CH 350V 120MA TO92 Microchip Technology |
1,981 | - |
|
- |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Reel (TR) | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 350 V | 120mA (Tj) | 0V | 25Ohm @ 120mA, 0V | - | - | ±20V | 300 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92 (TO-226) |
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VN0300L-G-P002MOSFET N-CH 30V 640MA TO92-3 Microchip Technology |
1,874 | - |
|
规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 640mA (Tj) | 5V, 10V | 1.2Ohm @ 1A, 10V | 2.5V @ 1mA | - | ±30V | 190 pF @ 20 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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APT9M100S/TRMOSFET MOS8 1000 V 9 A TO-268 Microchip Technology |
324 | - |
|
规格书 |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 9A (Tc) | 10V | 1.4Ohm @ 5A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2605 pF @ 25 V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT7F120SMOSFET N-CH 1200V 7A D3PAK Microchip Technology |
240 | - |
|
规格书 |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 7A (Tc) | 10V | 2.4Ohm @ 3A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2565 pF @ 25 V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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MSC090SMA070SSICFET N-CH 700V D3PAK Microchip Technology |
103 | - |
|
规格书 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 25A (Tc) | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
|
MSC180SMA120BMOSFET 1200V 25A TO-247 Microchip Technology |
105 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 21A (Tc) | 5V, 20V | 225mOhm @ 8A, 20V | 4.5V @ 500µA | 36 nC @ 20 V | +23V, -10V | 530 pF @ 1000 V | - | 147W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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MSC040SMA120S/TRMOSFET SIC 1200 V 40 MOHM TO-268 Microchip Technology |
397 | - |
|
规格书 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 64A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.6V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1990 pF @ 1000 V | - | 303W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-268 |
