上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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,TO-226_straightlead.jpg)
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VN2406L-GMOSFET N-CH 240V 190MA TO92-3 Microchip Technology |
1,271 | - |
|
规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bag | Active | N-Channel | MOSFET (Metal Oxide) | 240 V | 190mA (Tj) | 2.5V, 10V | 6Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
|
TP0620N3-GMOSFET P-CH 200V 175MA TO92-3 Microchip Technology |
791 | - |
|
规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bag | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 175mA (Tj) | 5V, 10V | 12Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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|
TN2640N3-GMOSFET N-CH 400V 220MA TO92-3 Microchip Technology |
167 | - |
|
规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bag | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 220mA (Tj) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 2V @ 2mA | - | ±20V | 225 pF @ 25 V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
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VN0550N3-G-P013MOSFET N-CH 500V 50MA TO92-3 Microchip Technology |
2,099 | - |
|
规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 50mA (Tj) | 5V, 10V | 60Ohm @ 50mA, 10V | 4V @ 1mA | - | ±20V | 55 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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VN4012L-GMOSFET N-CH 400V 160MA TO92-3 Microchip Technology |
457 | - |
|
规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bag | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 160mA (Tj) | 4.5V | 12Ohm @ 100mA, 4.5V | 1.8V @ 1mA | - | ±20V | 110 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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TP2635N3-GMOSFET P-CH 350V 180MA TO92-3 Microchip Technology |
344 | - |
|
规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bag | Active | P-Channel | MOSFET (Metal Oxide) | 350 V | 180mA (Tj) | 2.5V, 10V | 15Ohm @ 300mA, 10V | 2V @ 1mA | - | ±20V | 300 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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VP2206N3-G-P003MOSFET P-CH 60V 640MA TO92-3 Microchip Technology |
2,228 | - |
|
规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 640mA (Tj) | 5V, 10V | 900mOhm @ 3.5A, 10V | 3.5V @ 10mA | - | ±20V | 450 pF @ 25 V | - | 740mW (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
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VN2224N3-GMOSFET N-CH 240V 540MA TO92-3 Microchip Technology |
1,025 | - |
|
规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bag | Active | N-Channel | MOSFET (Metal Oxide) | 240 V | 540mA (Tj) | 5V, 10V | 1.25Ohm @ 2A, 10V | 3V @ 5mA | - | ±20V | 350 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
APT8M100BMOSFET N-CH 1000V 8A TO247 Microchip Technology |
536 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 8A (Tc) | 10V | 1.8Ohm @ 4A, 10V | 5V @ 1mA | 60 nC @ 10 V | ±30V | 1885 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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MSC750SMA170STRANS SJT 1700V D3PAK Microchip Technology |
442 | - |
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规格书 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | - | SiCFET (Silicon Carbide) | 1700 V | 6A (Tc) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | D3PAK |
