上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT8052BFLLGMOSFET N-CH 800V 15A TO247 Microchip Technology |
0 | - |
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规格书 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 15A (Tc) | - | 520mOhm @ 7.5A, 10V | 5V @ 1mA | 75 nC @ 10 V | - | 2035 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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APT8056BVRGMOSFET N-CH 800V 16A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 16A (Tc) | - | 560mOhm @ 500mA, 10V | 4V @ 1mA | 275 nC @ 10 V | - | 4440 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
APT56M60LMOSFET N-CH 600V 60A TO264 Microchip Technology |
0 | - |
|
规格书 |
- | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 130mOhm @ 28A, 10V | 5V @ 2.5mA | 280 nC @ 10 V | ±30V | 11300 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 |
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APT84F50LMOSFET N-CH 500V 84A TO264 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 84A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
|
APT5014SLLGMOSFET N-CH 500V 35A D3PAK Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 35A (Tc) | 10V | 140mOhm @ 17.5A, 10V | 5V @ 1mA | 72 nC @ 10 V | ±30V | 3261 pF @ 25 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT10090BFLLGMOSFET N-CH 1000V 12A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 12A (Tc) | 10V | 950mOhm @ 6A, 10V | 5V @ 1mA | 71 nC @ 10 V | ±30V | 1969 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT30M61SLLG/TRMOSFET N-CH 300V 54A D3PAK Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 54A (Tc) | 10V | 61mOhm @ 27A, 10V | 5V @ 1mA | 64 nC @ 10 V | ±30V | 3720 pF @ 25 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT56M60B2MOSFET N-CH 600V 60A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 130mOhm @ 28A, 10V | 5V @ 2.5mA | 280 nC @ 10 V | ±30V | 11300 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT75F50LMOSFET N-CH 500V 75A TO264 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 75A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 11600 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT6025SVRGMOSFET N-CH 600V 25A D3PAK Microchip Technology |
0 | - |
|
规格书 |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | - | 250mOhm @ 500mA, 10V | 4V @ 1mA | 275 nC @ 10 V | - | 5160 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
