上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT8043BLLGMOSFET N-CH 800V 20A TO247 Microchip Technology |
0 | - |
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规格书 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 20A (Tc) | - | 430mOhm @ 5A, 10V | 5V @ 1mA | 85 nC @ 10 V | - | 2500 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
APT5010B2VRGMOSFET N-CH 500V 47A T-MAX Microchip Technology |
0 | - |
|
规格书 |
POWER MOS V® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 47A (Tc) | - | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 470 nC @ 10 V | - | 8900 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
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APT84M50B2MOSFET N-CH 500V 84A T-MAX Microchip Technology |
0 | - |
|
规格书 |
- | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 84A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT6021BFLLGMOSFET N-CH 600V 29A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | - | 210mOhm @ 14.5A, 10V | 5V @ 1mA | 80 nC @ 10 V | - | 3470 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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APT1201R6BVFRGMOSFET N-CH 1200V 8A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 8A (Tc) | - | 1.6Ohm @ 4A, 10V | 4V @ 1mA | 230 nC @ 10 V | - | 3660 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
APT24M120LMOSFET N-CH 1200V 24A TO264 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 24A (Tc) | 10V | 680mOhm @ 12A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8370 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT10086BVRGMOSFET N-CH 1000V 13A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 13A (Tc) | - | 860mOhm @ 500mA, 10V | 4V @ 1mA | 275 nC @ 10 V | - | 4440 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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APT66M60LMOSFET N-CH 600V 70A TO264 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 190mOhm @ 33A, 10V | 5V @ 2.5mA | 330 nC @ 10 V | ±30V | 13190 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT8043BFLLGMOSFET N-CH 800V 20A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 20A (Tc) | - | 430mOhm @ 10A, 10V | 5V @ 1mA | 85 nC @ 10 V | - | 2500 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
|
APT66M60B2MOSFET N-CH 600V 70A T-MAX Microchip Technology |
0 | - |
|
规格书 |
- | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 100mOhm @ 33A, 10V | 5V @ 2.5mA | 330 nC @ 10 V | ±30V | 13190 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
