上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT8065SVRGMOSFET N-CH 800V 13A D3PAK Microchip Technology |
0 | - |
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规格书 |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | - | 650mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 3700 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
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APT6029SLLGMOSFET N-CH 600V 21A D3PAK Microchip Technology |
0 | - |
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规格书 |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | - | 290mOhm @ 10.5A, 10V | 5V @ 1mA | 65 nC @ 10 V | - | 2615 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
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APT20M34BLLGMOSFET N-CH 200V 74A TO247 Microchip Technology |
0 | - |
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规格书 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 74A (Tc) | - | 34mOhm @ 37A, 10V | 5V @ 1mA | 60 nC @ 10 V | - | 3660 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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APT5014BFLLGMOSFET N-CH 500V 35A TO247 Microchip Technology |
0 | - |
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规格书 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 35A (Tc) | - | 140mOhm @ 17.5A, 10V | 5V @ 1mA | 72 nC @ 10 V | - | 3261 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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APT41M80LMOSFET N-CH 800V 43A TO264 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 43A (Tc) | 10V | 210mOhm @ 20A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8070 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT10M19SVFRGMOSFET N-CH 100V 75A D3PAK Microchip Technology |
0 | - |
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规格书 |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | - | 19mOhm @ 37.5A, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 6120 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
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APT6025BLLGMOSFET N-CH 600V 24A TO247 Microchip Technology |
0 | - |
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规格书 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | - | 250mOhm @ 12A, 10V | 5V @ 1mA | 65 nC @ 10 V | - | 2910 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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APT5015SVFRGMOSFET N-CH 500V 32A D3PAK Microchip Technology |
0 | - |
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规格书 |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 32A (Tc) | 10V | 150mOhm @ 16A, 10V | 4V @ 1mA | 300 nC @ 10 V | ±30V | 5280 pF @ 25 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT77N60SC6MOSFET N-CH 600V 77A D3PAK Microchip Technology |
0 | - |
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规格书 |
CoolMOS™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 77A (Tc) | 10V | 41mOhm @ 44.4A, 10V | 3.6V @ 2.96mA | 260 nC @ 10 V | ±20V | 13600 pF @ 25 V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT47N60SC3GMOSFET N-CH 600V 47A D3PAK Microchip Technology |
0 | - |
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规格书 |
CoolMOS™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 260 nC @ 10 V | ±20V | 7015 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
