上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT5018SFLLG/TRMOSFET N-CH 500V 27A D3PAK Microchip Technology |
0 | - |
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规格书 |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 27A (Tc) | 10V | 180mOhm @ 13.5A, 10V | 5V @ 1mA | 58 nC @ 10 V | ±30V | 2596 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT34M60BMOSFET N-CH 600V 36A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 190mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | ±30V | 6640 pF @ 25 V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
|
APT75M50B2MOSFET N-CH 500V 75A T-MAX Microchip Technology |
0 | - |
|
规格书 |
- | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 75A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 11600 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ |
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APT5020SVFRG/TRMOSFET N-CH 500V 26A D3PAK Microchip Technology |
0 | - |
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规格书 |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 200mOhm @ 13A, 10V | 4V @ 1mA | 225 nC @ 10 V | ±30V | 4440 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT43M60B2MOSFET N-CH 600V 45A T-MAX Microchip Technology |
0 | - |
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规格书 |
POWER MOS 8™ | TO-247-3 Variant | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | ±30V | 8590 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT5015BVRGMOSFET N-CH 500V 32A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 32A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 5280 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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APT43F60LMOSFET N-CH 600V 45A TO264 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | ±30V | 8590 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT31M100B2MOSFET N-CH 1000V 32A T-MAX Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 32A (Tc) | 10V | 380mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT8065BVRGMOSFET N-CH 800V 13A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | - | 650mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 3700 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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APT1003RSFLLG/TRMOSFET N-CH 1KV 4A D3PAK Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4A (Tc) | 10V | 3Ohm @ 2A, 10V | 5V @ 1mA | 34 nC @ 10 V | ±30V | 694 pF @ 25 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
