制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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APT4014BVFRGMOSFET N-CH 400V 28A TO247 Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 28A (Tc) | - | 140mOhm @ 500mA, 10V | 4V @ 1mA | 160 nC @ 10 V | - | 3600 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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APT17F100SMOSFET N-CH 1000V 17A D3PAK Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 17A (Tc) | 10V | 780mOhm @ 9A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 4845 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT43F60B2MOSFET N-CH 600V 45A T-MAX Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS 8™ | TO-247-3 Variant | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | ±30V | 8590 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT5016BLLGMOSFET N-CH 500V 30A TO247 Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 160mOhm @ 15A, 10V | 5V @ 1mA | 72 nC @ 10 V | ±30V | 2833 pF @ 25 V | - | 329W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT42F50SMOSFET N-CH 500V 42A D3PAK Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 42A (Tc) | 10V | 130mOhm @ 21A, 10V | 5V @ 1mA | 170 nC @ 10 V | ±30V | 6810 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT5018SLLGMOSFET N-CH 500V 27A D3PAK Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 27A (Tc) | - | 180mOhm @ 13.5A, 10V | 5V @ 1mA | 58 nC @ 10 V | - | 2596 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
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APT56M50B2MOSFET N-CH 500V 56A T-MAX Microchip Technology |
0 | - |
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![]() 规格书 |
- | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ |
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APT6038SLLGMOSFET N-CH 600V 17A D3PAK Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | - | 380mOhm @ 8.5A, 10V | 5V @ 1mA | 43 nC @ 10 V | - | 1850 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
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APT5018SFLLGMOSFET N-CH 500V 27A D3PAK Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 27A (Tc) | - | 180mOhm @ 13.5A, 10V | 5V @ 1mA | 58 nC @ 10 V | - | 2596 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
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APT5018SLLG/TRMOSFET N-CH 500V 27A D3PAK Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 27A (Tc) | 10V | 180mOhm @ 13.5A, 10V | 5V @ 1mA | 58 nC @ 10 V | ±30V | 2596 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |