上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT5018BLLGMOSFET N-CH 500V 27A TO247 Microchip Technology |
0 | - |
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规格书 |
POWER MOS 7® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 27A (Tc) | 10V | 180mOhm @ 13.5A, 10V | 5V @ 1mA | 58 nC @ 10 V | ±30V | 2596 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT6038BLLGMOSFET N-CH 600V 17A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | - | 380mOhm @ 8.5A, 10V | 5V @ 1mA | 43 nC @ 10 V | - | 1850 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
APT5024SLLG/TRMOSFET N-CH 500V 22A D3PAK Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 240mOhm @ 11A, 10V | 5V @ 1mA | 43 nC @ 10 V | ±30V | 1900 pF @ 25 V | - | 265W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT5018BFLLGMOSFET N-CH 500V 27A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 27A (Tc) | - | 180mOhm @ 13.5A, 10V | 5V @ 1mA | 58 nC @ 10 V | - | 2596 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
|
APT6038BFLLGMOSFET N-CH 600V 17A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | - | 380mOhm @ 8.5A, 10V | 5V @ 1mA | 43 nC @ 10 V | - | 1850 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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APT24M80BMOSFET N-CH 800V 25A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 25A (Tc) | 10V | 390mOhm @ 12A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 4595 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT22F80SMOSFET N-CH 800V 23A D3PAK Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 23A (Tc) | 10V | 430mOhm @ 12A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 4595 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
|
APT34N80B2C3GMOSFET N-CH 800V 34A T-MAX Microchip Technology |
0 | - |
|
规格书 |
- | TO-247-3 Variant | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 34A (Tc) | 10V | 145mOhm @ 22A, 10V | 3.9V @ 2mA | 355 nC @ 10 V | ±20V | 4510 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
APT34N80LC3GMOSFET N-CH 800V 34A TO264 Microchip Technology |
0 | - |
|
规格书 |
- | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 34A (Tc) | 10V | 145mOhm @ 22A, 10V | 3.9V @ 2mA | 355 nC @ 10 V | ±20V | 4510 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT20M45BVRGMOSFET N-CH 200V 56A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 56A (Tc) | 10V | 45mOhm @ 500mA, 10V | 4V @ 1mA | 195 nC @ 10 V | ±30V | 4860 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
