上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT18F60BMOSFET N-CH 600V 19A TO247 Microchip Technology |
0 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 390mOhm @ 9A, 10V | 5V @ 1mA | 90 nC @ 10 V | ±30V | 3550 pF @ 25 V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT7F100BMOSFET N-CH 1000V 7A TO247 Microchip Technology |
0 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 7A (Tc) | 10V | 2Ohm @ 4A, 10V | 5V @ 500µA | 58 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT9M100BMOSFET N-CH 1000V 9A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 9A (Tc) | 10V | 1.4Ohm @ 5A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2605 pF @ 25 V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT12M80BMOSFET N-CH 800V 13A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 800mOhm @ 6A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2470 pF @ 25 V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT11F80BMOSFET N-CH 800V 12A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 12A (Tc) | 10V | 900mOhm @ 6A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2471 pF @ 25 V | - | 337W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT30N60BC6MOSFET N-CH 600V 30A TO247 Microchip Technology |
0 | - |
|
规格书 |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 88 nC @ 10 V | ±20V | 2267 pF @ 25 V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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MSC750SMA170SAMOSFET SIC 1700 V 750 MOHM D2PAK Microchip Technology |
0 | - |
|
规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab) | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 6A (Tc) | 20V | 940mOhm @ 2.5A, 20V | 3.25V @ 100µA (Typ) | 11 nC @ 20 V | +23V, -10V | 184 pF @ 1000 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7 |
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APT9F100BMOSFET N-CH 1000V 9A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 9A (Tc) | 10V | 1.6Ohm @ 5A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2606 pF @ 25 V | - | 337W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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MSC360SMA120SAMOSFET SIC 1200 V 360 MOHM TO-26 Microchip Technology |
0 | - |
|
规格书 |
- | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 11A (Tc) | 20V | 450mOhm @ 5A, 20V | 3.14V @ 250µA | 21 nC @ 20 V | +23V, -10V | 255 pF @ 1000 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | - |
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APT23F60BMOSFET N-CH 600V 24A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 290mOhm @ 11A, 10V | 5V @ 1mA | 110 nC @ 10 V | ±30V | 4415 pF @ 25 V | - | 415W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
