上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFAG20N-CHANNEL HERMETIC MOS HEXFET International Rectifier |
1,122 | - |
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规格书 |
- | TO-204AA, TO-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 1.3A | - | - | - | - | - | - | - | 50W | - | - | - | Through Hole | TO-204AA (TO-3) |
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AUIRFS4010-7TRLMOSFET N-CH 100V 180A TO263 International Rectifier |
666 | - |
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规格书 |
HEXFET® | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | - | 4.7mOhm @ 106A, 10V | 4V @ 250µA | 215 nC @ 10 V | ±20V | 9575 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK-7 |
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IRFF9231MOSFET N-CH 150V 4A TO205AF International Rectifier |
824 | - |
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规格书 |
- | TO-205AF Metal Can | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 4A (Tc) | - | - | - | - | - | - | - | 25W | - | - | - | Through Hole | TO-205AF (TO-39) |
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AUIRFP2907AUTOMOTIVE HEXFET N CHANNEL International Rectifier |
8,540 | - |
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规格书 |
HEXFET® | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 90A (Tc) | 10V | 4.5mOhm @ 125A, 10V | 4V @ 250µA | 620 nC @ 10 V | ±20V | 13000 pF @ 25 V | - | 470W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IRF9230200V, P-CHANNEL REPETITIVE AVALA International Rectifier |
10,200 | - |
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规格书 |
HEXFET® | TO-204AA, TO-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 6.5A (Tc) | 10V | 940mOhm @ 6.5A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-204AA (TO-3) |
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IRFAC30N-CHANNEL HERMETIC MOS HEXFET International Rectifier |
427 | - |
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规格书 |
HEXFET® | TO-204AA, TO-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.6A (Tc) | 10V | 2.5Ohm @ 3.6A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 630 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-204AA (TO-3) |
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IRF9133AUTOMOTIVE HEXFET P-CHANNEL POWE International Rectifier |
200 | - |
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规格书 |
- | TO-204AA, TO-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 10A | - | - | - | - | - | - | - | 88W | - | - | - | Through Hole | TO-204AA (TO-3) |
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IRF9240HEXFET POWER MOSFET International Rectifier |
6,174 | - |
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规格书 |
HEXFET® | TO-204AA, TO-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 11A (Tc) | 10V | 580mOhm @ 11A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-204AA (TO-3) |
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IRFAF40N-CHANNEL HERMETIC MOS HEXFET International Rectifier |
934 | - |
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规格书 |
HEXFET® | TO-204AA, TO-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 4.3A (Tc) | 10V | 2.9Ohm @ 4.3A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 1500 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-204AA (TO-3) |
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IRFAF50N-CHANNEL HERMETIC MOS HEXFET International Rectifier |
644 | - |
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规格书 |
HEXFET® | TO-204AA, TO-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 6.2A (Tc) | 10V | 1.85Ohm @ 6.2A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 2700 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-204AA (TO-3) |
