上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AUIRFS3806MOSFET N-CH 60V 43A D2PAK International Rectifier |
8,450 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30 nC @ 10 V | ±20V | 1150 pF @ 50 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRF6668TRPBFIRF6668 - 12V-300V N-CHANNEL POW International Rectifier |
55,098 | - |
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规格书 |
HEXFET® | DirectFET™ Isometric MZ | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 55A (Tc) | 10V | 15mOhm @ 12A, 10V | 4.9V @ 100µA | 31 nC @ 10 V | ±20V | 1320 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MZ |
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AUIRFU8403MOSFET N-CH 40V 100A I-PAK International Rectifier |
14,422 | - |
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规格书 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 3.1mOhm @ 76A, 10V | 3.9V @ 100µA | 99 nC @ 10 V | ±20V | 3171 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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AUIRFSL8403MOSFET N-CH 40V 123A TO262 International Rectifier |
3,030 | - |
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规格书 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 123A (Tc) | 10V | 3.3mOhm @ 70A, 10V | 3.9V @ 100µA | 93 nC @ 10 V | ±20V | 3183 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRF6714MTRPBFMOSFET N-CH 25V 29A/166A DIRECT International Rectifier |
42,142 | - |
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规格书 |
HEXFET® | DirectFET™ Isometric MX | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 29A (Ta), 166A (Tc) | 4.5V, 10V | 2.1mOhm @ 29A, 10V | 2.4V @ 100µA | 44 nC @ 4.5 V | ±20V | 3890 pF @ 13 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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AUIRF7734M2TRMOSFET N-CH 40V 17A DIRECTFET M2 International Rectifier |
4,800 | - |
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规格书 |
HEXFET® | DirectFET™ Isometric M2 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 17A (Ta) | 10V | 4.9mOhm @ 43A, 10V | 4V @ 100µA | 72 nC @ 10 V | ±20V | 2545 pF @ 25 V | - | 2.5W (Ta), 46W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric M2 |
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AUIRF7732S2TRMOSFET N-CH 40V 14A DIRECTFET SC International Rectifier |
3,106 | - |
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规格书 |
HEXFET® | DirectFET™ Isometric SC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 14A (Ta) | 10V | 6.95mOhm @ 33A, 10V | 4V @ 50µA | 45 nC @ 10 V | ±20V | 1700 pF @ 25 V | - | 2.5W (Ta), 41W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DIRECTFET™ SC |
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AUIRL3705ZMOSFET N-CH 55V 75A TO220AB International Rectifier |
750 | - |
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规格书 |
HEXFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60 nC @ 5 V | ±16V | 2880 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF6613TRPBFIRF6613 - 12V-300V N-CHANNEL POW International Rectifier |
22,143 | - |
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规格书 |
HEXFET® | DirectFET™ Isometric MT | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 23A (Ta), 150A (Tc) | 4.5V, 10V | 3.4mOhm @ 23A, 10V | 2.25V @ 250µA | 63 nC @ 4.5 V | ±20V | 5950 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
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IRFZ44ZLPBFIRFZ44 - 12V-300V N-CHANNEL POWE International Rectifier |
1,350 | - |
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规格书 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 1420 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
