制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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IRF432HEXFET POWER MOSFETS International Rectifier |
1,192 | - |
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![]() 规格书 |
- | TO-204AA, TO-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4A | - | - | - | - | - | - | - | 75W | - | - | - | Through Hole | TO-204AA (TO-3) |
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AUIRFR4104TRLAUTOMOTIVE HEXFET N CHANNEL International Rectifier |
3,907 | - |
|
![]() 规格书 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | - | 5.5mOhm @ 42A, 10V | 4V @ 250µA | 89 nC @ 10 V | - | 2950 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
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IRFPC423.9A, 1000V, 4.2 OHM, N-CHANNEL International Rectifier |
5,701 | - |
|
![]() 规格书 |
HEXFET® | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.9A (Tc) | 10V | 1.6Ohm @ 3.7A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC (TO-3P) |
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AUIRFS8408TRRMOSFET N-CH 40V 195A D2PAK International Rectifier |
490 | - |
|
![]() 规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | - | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324 nC @ 10 V | ±20V | 10820 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK |
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AUIRFS8408AUTOMOTIVE HEXFET N CHANNEL International Rectifier |
268 | - |
|
![]() 规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324 nC @ 10 V | ±20V | 10820 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRF2807AUTOMOTIVE HEXFET N CHANNEL International Rectifier |
6,552 | - |
|
![]() 规格书 |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 75A (Tc) | 10V | 13mOhm @ 43A, 10V | 4V @ 250µA | 160 nC @ 10 V | ±20V | 3820 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF60DM206IRF60 - 12V-300V N-CHANNEL POWER International Rectifier |
40,373 | - |
|
![]() 规格书 |
StrongIRFET™ | DirectFET™ Isometric ME | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 130A (Tc) | 6V, 10V | 2.9mOhm @ 80A, 10V | 3.7V @ 150µA | 200 nC @ 10 V | ±20V | 6530 pF @ 25 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric ME |
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AUIRFB4410-IRAUTOMOTIVE HEXFET N CHANNEL International Rectifier |
1,152 | - |
|
![]() 规格书 |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 1.037mA | 180 nC @ 10 V | ±20V | 5150 pF @ 50 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-904 |
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AUIRFS8403TRRMOSFET N-CH 40V 123A D2PAK International Rectifier |
800 | - |
|
![]() 规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 123A (Tc) | - | 3.3mOhm @ 70A, 10V | 3.9V @ 100µA | 93 nC @ 10 V | ±20V | 3183 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK |
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AUIRL3705NAUTOMOTIVE HEXFET N-CHANNEL International Rectifier |
22,792 | - |
|
![]() 规格书 |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 89A (Tc) | - | 10mOhm @ 46A, 10V | 2V @ 250µA | 98 nC @ 5 V | - | 3600 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |