上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF225N-CHANNEL HERMETIC MOS HEXFET International Rectifier |
288 | - |
|
规格书 |
- | TO-204AA, TO-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 3.3A | - | - | - | - | - | - | - | 40W | - | - | - | Through Hole | TO-204AA (TO-3) |
|
AUIRFS3607TRLMOSFET N-CH 75V 80A D2PAK International Rectifier |
15,667 | - |
|
规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84 nC @ 10 V | ±20V | 3070 pF @ 50 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
AUIRF4905LAUTOMOTIVE HEXFET P CHANNEL International Rectifier |
1,000 | - |
|
规格书 |
HEXFET® | TO-262 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 3500 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 |
|
IRF224N-CHANNEL HERMETIC MOS HEXFET International Rectifier |
2,200 | - |
|
规格书 |
- | TO-204AA, TO-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 3.8A | - | - | - | - | - | - | - | 40W | - | - | - | Through Hole | TO-204AA (TO-3) |
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AUIRFP1405AUTOMOTIVE HEXFET N CHANNEL International Rectifier |
11,500 | - |
|
规格书 |
HEXFET® | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 95A (Tc) | 10V | 5.3mOhm @ 95A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 5600 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
|
AUIRLS3034TRLAUTOMOTIVE HEXFET N-CHANNEL International Rectifier |
23,735 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | - | 1.7mOhm @ 195A, 10V | 2.5V @ 250µA | 162 nC @ 4.5 V | - | 10315 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRLS3034AUTOMOTIVE HEXFET N-CHANNEL International Rectifier |
4,102 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 195A, 10V | 2.5V @ 250µA | 162 nC @ 4.5 V | ±20V | 10315 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRFS4310ZTRLAUIRFS4310Z - 75V-100V N-CHANNEL International Rectifier |
38,742 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6860 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFAF20N-CHANNEL HERMETIC MOS HEXFET International Rectifier |
620 | - |
|
规格书 |
- | TO-204AA, TO-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 1.6A | - | - | - | - | - | - | - | 50W | - | - | - | Through Hole | TO-204AA (TO-3) |
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2N6787POWER FIELD-EFFECT TRANSISTOR, N International Rectifier |
287 | - |
|
规格书 |
- | TO-205AF Metal Can | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 6A (Tc) | - | - | - | - | - | - | - | 20W | - | - | - | Through Hole | TO-205AF (TO-39) |
