上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ISK036N03LM5AULA1TRENCH <= 40V PG-VSON-6 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ 5 | 6-PowerVDFN | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 44A (Tc) | 4.5V, 10V | 3.6mOhm @ 20A, 10V | 2V @ 250µA | 21.5 nC @ 10 V | ±16V | 1400 pF @ 15 V | - | 11W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-6-1 |
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IPT039N15N5XTMA1TRENCH >=100V PG-HSOF-8 Infineon Technologies |
0 | - |
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- |
OptiMOS™ | 8-PowerSFN | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 150 V | 190A (Tc) | 8V, 10V | 3.9mOhm @ 50A, 10V | 4.6V @ 257µA | 98 nC @ 10 V | ±20V | 7700 pF @ 75 V | - | 319W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8 |
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IAUS300N04S4N007ATMA1MOSFET_(20V 40V) PG-HSOG-8 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 300A (Tc) | 10V | 0.74mOhm @ 100A, 10V | 4V @ 275µA | 342 nC @ 10 V | ±20V | 27356 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8-1 |
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IMT65R022M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 Infineon Technologies |
0 | - |
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- |
* | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IMT65R039M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 Infineon Technologies |
0 | - |
|
规格书 |
* | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPB80P03P405ATMA2MOSFET_(20V 40V) PG-TO263-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 10V | 4.7mOhm @ 80A, 10V | 4V @ 253µA | 130 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPA65R190DEXKSA1MOSFET Infineon Technologies |
0 | - |
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- |
* | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPB042N10NF2SATMA1TRENCH >=100V Infineon Technologies |
0 | - |
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- |
* | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AUIRFU8403-701TRLMOSFET Infineon Technologies |
0 | - |
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- |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 3.1mOhm @ 76A, 10V | 3.9V @ 100µA | 99 nC @ 10 V | ±20V | 3171 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO251-3-21 |
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IRFU2405PBFAKLA1MOSFET N-CH Infineon Technologies |
0 | - |
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- |
* | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
