上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF7726TRPBFXTMA1MOSFET P-CH 30V 7A MICRO8 Infineon Technologies |
0 | - |
|
- |
HEXFET® | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 30 V | 7A (Ta) | 4.5V, 10V | 26mOhm @ 7A, 10V | 2.5V @ 250µA | 69 nC @ 10 V | ±20V | 2204 pF @ 25 V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro8™ |
|
|
IPD90P04P405AUMA2MOSFET P-CH 40V 90A TO252-3 Infineon Technologies |
0 | - |
|
- |
OptiMOS™ P2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 4.7mOhm @ 90A, 10V | 4V @ 250µA | 154 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-313 |
|
|
IPD50P04P4L11AUMA1MOSFET Infineon Technologies |
0 | - |
|
- |
OptiMOS™ P2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 10.6mOhm @ 50A, 10V | 2.2V @ 85µA | 59 nC @ 10 V | +5V, -16V | 3900 pF @ 25 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-313 |
|
|
IPB180P04P4L02AUMA2MOSFET Infineon Technologies |
0 | - |
|
- |
OptiMOS™ P2 | TO-263-7, D2PAK (6 Leads + Tab) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 4.5V, 10V | 2.4mOhm @ 100A, 10V | 2.2V @ 410µA | 286 nC @ 10 V | +5V, -16V | 18700 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
|
|
IPD70P04P4L08AUMA2MOSFET Infineon Technologies |
0 | - |
|
- |
OptiMOS™ P2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 4.5V, 10V | 7.8mOhm @ 70A, 10V | 2.2V @ 120µA | 92 nC @ 10 V | +5V, -16V | 5430 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-313 |
|
|
IPD50P04P413AUMA2MOSFET Infineon Technologies |
0 | - |
|
- |
OptiMOS™ P2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 12.6mOhm @ 50A, 10V | 4V @ 85µA | 51 nC @ 10 V | ±20V | 3670 pF @ 25 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-313 |
|
|
SISC262SN06LX6SA1MOSFET Infineon Technologies |
0 | - |
|
- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IAUW162N04S4LX7SA1MOSFET Infineon Technologies |
0 | - |
|
- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPP80N06S207AKSA3MOSFET Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 6.6mOhm @ 68A, 10V | 4V @ 180µA | 110 nC @ 10 V | ±20V | 3400 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-1 |
|
|
IIPC20S4N04X2SA2MOSFET Infineon Technologies |
0 | - |
|
- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
