上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AUIRF2804L-313TRLMOSFET N-CH 40V 195A TO262 Infineon Technologies |
0 | - |
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- |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2.3mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6450 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-262-3 |
|
AUXYBFP3306MOSFET N-CH 60V TO-247AC Infineon Technologies |
0 | - |
|
- |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AUIRFSL4010-313TRLMOSFET N-CH 100V 180A TO262 Infineon Technologies |
0 | - |
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- |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 4.7mOhm @ 106A, 10V | 4V @ 250µA | 215 nC @ 10 V | ±8V | 9575 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-262-3 |
|
IRF8721TRPBF-1MOSFET N-CH 30V 14A 8SO Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | ±20V | 1040 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IRF7456TRPBF-1MOSFET N-CH 20V 16A 8SO Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 16A (Ta) | 2.8V, 10V | 6.5mOhm @ 16A, 10V | 2V @ 250µA | 62 nC @ 5 V | ±12V | 3640 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IRLML0100TRPBF-1MOSFET N-CH 100V 1.6A SOT23 Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.6A (Ta) | 4.5V, 10V | 220mOhm @ 1.6A, 10V | 2.5V @ 25µA | 2.5 nC @ 4.5 V | ±16V | 290 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro3™/SOT-23 |
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IRFC4019EBMOSFET N-CH 150V 17A DIE Infineon Technologies |
0 | - |
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- |
HEXFET® | Die | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 17A | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | Die |
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IRF8113TRPBF-1MOSFET N-CH 30V 17.2A 8SO Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 17.2A (Ta) | 4.5V, 10V | 5.6mOhm @ 17.2A, 10V | 2.2V @ 250µA | 36 nC @ 4.5 V | ±20V | 2910 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IRF7455TRPBF-1MOSFET N-CH 30V 15A 8SO Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 2.8V, 10V | 7.5mOhm @ 15A, 10V | 2V @ 250µA | 56 nC @ 5 V | ±12V | 3480 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IRLML6402TRPBF-1MOSFET P-CH 20V 3.7A SOT23 Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.7A (Ta) | 2.5V, 4.5V | 65mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 12 nC @ 5 V | ±12V | 633 pF @ 10 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro3™/SOT-23 |
