上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF8707TRPBF-1MOSFET N-CH 30V 11A 8SO Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 11.9mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3 nC @ 4.5 V | ±20V | 760 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IRF7821TRPBF-1MOSFET N-CH 30V 13.6A 8SO Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.6A (Ta) | 4.5V, 10V | 9.1mOhm @ 13A, 10V | 1V @ 250µA | 14 nC @ 4.5 V | ±20V | 1010 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IRF7809AVTRPBF-1MOSFET N-CH 30V 13.3A 8SO Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.3A (Ta) | 4.5V | 9mOhm @ 15A, 4.5V | 1V @ 250µA | 62 nC @ 5 V | ±12V | 3780 pF @ 16 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IRF7805ZTRPBF-1MOSFET N-CH 30V 16A 8SO Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta) | 4.5V, 10V | 6.8mOhm @ 16A, 10V | 2.25V @ 250µA | 27 nC @ 4.5 V | ±20V | 2080 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IRF8714TRPBF-1MOSFET N-CH 30V 14A 8SO Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | ±20V | 1020 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IPP60R380P6POWER FIELD-EFFECT TRANSISTOR Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ P6 | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | - | 10.6A (Tc) | - | - | - | - | - | - | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRFC7314BMOSFET P-CH 20V 5.3A 8-SOIC Infineon Technologies |
0 | - |
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规格书 |
- | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | ±12V | - | - | - | - | - | - | - | - |
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IRF7416TRPBF-1MOSFET P-CH 30V 10A 8SO Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | - | 20mOhm @ 5.6A, 10V | 2.04V @ 250µA | 92 nC @ 10 V | ±20V | 1700 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IRLML2803TRPBF-1MOSFET N-CH 30V 1.2A SOT23 Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.2A (Ta) | - | 250mOhm @ 910mA, 10V | 1V @ 250µA | 5 nC @ 10 V | ±20V | 85 pF @ 25 V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro3™/SOT-23 |
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IRF7410TRPBF-1MOSFET P-CH 12V 16A 8SO Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 16A (Ta) | - | 7mOhm @ 16A, 4.5V | 900mV @ 250µA | 91 nC @ 4.5 V | ±8V | 8676 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
