制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
AUXHAFR6215IC DISCRETE Infineon Technologies |
0 | - |
|
- |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
64-4126PBFIC MOSFET Infineon Technologies |
0 | - |
|
- |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
AUXDKG4PC40S-EIC DISCRETE Infineon Technologies |
0 | - |
|
- |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
AUXTALR3915IC DISCRETE Infineon Technologies |
0 | - |
|
- |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
94-4344PBFIC MOSFET Infineon Technologies |
0 | - |
|
- |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
BSC0804LSATMA1MOSFET N-CH 100V 40A TDSON-8-6 Infineon Technologies |
0 | - |
|
![]() 规格书 |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 4.5V, 10V | 9.6mOhm @ 20A, 10V | 2.3V @ 36µA | 14.6 nC @ 4.5 V | ±20V | 2100 pF @ 50 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8-6 |
![]() |
BSC014N06LS5ATMA1MOSFET 60V TDSON-8-7 Infineon Technologies |
0 | - |
|
- |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | 60 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TDSON-8-7 |
![]() |
IRFP450PBFMOSFET N-CH 500V 14A TO247AC Infineon Technologies |
0 | - |
|
- |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 400mOhm @ 8.4A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 2600 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
![]() |
IPC65SR048CFDAE8206X2SA2MOSFET N-CH Infineon Technologies |
0 | - |
|
- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
IPW80R290C3AN-CHANNEL AUTOMOTIVE MOSFET Infineon Technologies |
0 | - |
|
![]() 规格书 |
CoolMOS™ | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 117 nC @ 10 V | ±20V | 2300 pF @ 100 V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3 |