上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD60R1K0PFD7SAUMA1CONSUMER PG-TO252-3 Infineon Technologies |
268 | - |
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规格书 |
CoolMOS™ PFD7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.7A (Tc) | 10V | 1Ohm @ 1A, 10V | 4.5V @ 50µA | 6 nC @ 10 V | ±20V | 230 pF @ 400 V | - | 26W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD60R800CEAUMA1CONSUMER Infineon Technologies |
2,497 | - |
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规格书 |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8.4A (Tc) | 10V | 800mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2 nC @ 10 V | ±20V | 373 pF @ 100 V | - | 74W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-344 |
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IPN80R2K0P7ATMA1MOSFET N-CHANNEL 800V 3A SOT223 Infineon Technologies |
3,000 | - |
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规格书 |
CoolMOS™ P7 | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Tc) | 10V | 2Ohm @ 940mA, 10V | 3.5V @ 50µA | 9 nC @ 10 V | ±20V | 175 pF @ 500 V | - | 6.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223 |
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SPD04P10PLGBTMA1MOSFET P-CH 100V 4.2A TO252-3 Infineon Technologies |
2,158 | - |
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规格书 |
SIPMOS® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 4.2A (Tc) | 4.5V, 10V | 850mOhm @ 3A, 10V | 2V @ 380µA | 16 nC @ 10 V | ±20V | 372 pF @ 25 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD60R1K4C6ATMA1MOSFET N-CH 600V 3.2A TO252-3 Infineon Technologies |
19,885 | - |
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规格书 |
CoolMOS™ C6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.2A (Tc) | 10V | 1.4Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4 nC @ 10 V | ±20V | 200 pF @ 100 V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD60R600PFD7SAUMA1CONSUMER PG-TO252-3 Infineon Technologies |
4,694 | - |
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规格书 |
CoolMOS™ PFD7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4.5V @ 80µA | 8.5 nC @ 10 V | ±20V | 344 pF @ 400 V | - | 31W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD60R650CEAUMA1CONSUMER Infineon Technologies |
2,496 | - |
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规格书 |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.9A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 82W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-344 |
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ISC046N04NM5ATMA140V 4.6M OPTIMOS MOSFET SUPERSO8 Infineon Technologies |
14,250 | - |
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规格书 |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 19A (Ta), 77A (Tc) | 7V, 10V | 4.6mOhm @ 35A, 10V | 3.4V @ 17µA | 21 nC @ 10 V | ±20V | 1400 pF @ 20 V | - | 3W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |
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BSZ035N03MSGATMA1MOSFET N-CH 30V 18A/40A 8TSDSON Infineon Technologies |
11,581 | - |
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规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2V @ 250µA | 74 nC @ 10 V | ±20V | 5700 pF @ 15 V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 |
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IPU80R1K4P7AKMA1MOSFET N-CH 800V 4A TO251-3 Infineon Technologies |
6 | - |
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规格书 |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 700µA | 10.05 nC @ 10 V | ±20V | 250 pF @ 500 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-21 |
