上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFBA1405PMOSFET N-CH 55V 174A SUPER-220 Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-273AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 174A (Tc) | 10V | 5mOhm @ 101A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 5480 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | SUPER-220™ (TO-273AA) |
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IRL1004SMOSFET N-CH 40V 130A D2PAK Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 130A (Tc) | 4.5V, 10V | 6.5mOhm @ 78A, 10V | 1V @ 250µA | 100 nC @ 4.5 V | ±16V | 5330 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IPW65R150CFDFKSA1MOSFET N-CH 650V 22.4A TO247-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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GS-065-018-6-LR-TRGS-065-018-6-LR-TR Infineon Technologies Canada Inc. |
0 | - |
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- |
- | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 23A (Tc) | 6V | 90mOhm @ 5.5A, 6V | 2.6V @ 4.8mA | 4.2 nC @ 6 V | +7V, -10V | 132 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (8x8) |
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IPC300N20N3X7SA1MV POWER MOS Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ 3 | Die | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | - | 10V | 100mOhm @ 2A, 10V | 4V @ 270µA | - | - | - | - | - | - | - | - | Surface Mount | Die |
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IPB80P04P407ATMA2MOSFET_(20V 40V) PG-TO263-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 7.4mOhm @ 80A, 10V | 4V @ 150µA | 89 nC @ 10 V | ±20V | 6085 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IRFS3107-7PPBFMOSFET N-CH 75V 240A D2PAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 240A (Tc) | 10V | 2.6mOhm @ 160A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9200 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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IPP100N18N3GXKSA1TRENCH >=100V Infineon Technologies |
0 | - |
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- |
- | - | Tube | Last Time Buy | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRFH7004TR2PBFMOSFET N CH 40V 100A PQFN5X6 Infineon Technologies |
0 | - |
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规格书 |
- | 8-VQFN Exposed Pad | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | - | 1.4mOhm @ 100A, 10V | 3.9V @ 150µA | 194 nC @ 10 V | - | 6419 pF @ 25 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
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IPC60R099C6X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
0 | - |
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- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
