上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF3805SMOSFET N-CH 55V 75A D2PAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 290 nC @ 10 V | ±20V | 7960 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF9540NLPBFMOSFET P-CH 100V 23A TO262 Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 23A (Tc) | 10V | 117mOhm @ 14A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 1450 pF @ 25 V | - | 3.1W (Ta), 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 |
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IRLMS1902TRMOSFET N-CH 20V 3.2A MICRO6 Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | SOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 3.2A (Ta) | 2.7V, 4.5V | 100mOhm @ 2.2A, 4.5V | 700mV @ 250µA (Min) | 7 nC @ 4.5 V | ±12V | 300 pF @ 15 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro6™(TSOP-6) |
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IRFZ48NLMOSFET N-CH 55V 64A TO262 Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 64A (Tc) | 10V | 14mOhm @ 32A, 10V | 4V @ 250µA | 81 nC @ 10 V | ±20V | 1970 pF @ 25 V | - | 3.8W (Ta), 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRLI2910MOSFET N-CH 100V 31A TO220AB FP Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 31A (Tc) | 4V, 10V | 26mOhm @ 16A, 10V | 2V @ 250µA | 140 nC @ 5 V | ±16V | 3700 pF @ 25 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
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IRF7832TRMOSFET N-CH 30V 20A 8-SOIC Infineon Technologies |
0 | - |
|
规格书 |
- | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta) | - | 4mOhm @ 20A, 10V | 2.32V @ 250µA | 51 nC @ 4.5 V | - | 4310 pF @ 15 V | - | - | - | - | - | Surface Mount | 8-SO |
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IPD90P04P4L04ATMA1MOSFET P-CH 40V 90A TO252-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 4.5V, 10V | 4.3mOhm @ 90A, 10V | 2.2V @ 250µA | 176 nC @ 10 V | ±16V | 11570 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-313 |
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BSB008NE2LXXUMA1MOSFET N-CH 25V 46A/180A 2WDSON Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 46A (Ta), 180A (Tc) | 4.5V, 10V | 0.8mOhm @ 30A, 10V | 2V @ 250µA | 343 nC @ 10 V | ±20V | 16000 pF @ 12 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
|
IPB009N03LGATMA1MOSFET N-CH 30V 180A TO263-7 Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 180A (Tc) | 4.5V, 10V | 0.95mOhm @ 100A, 10V | 2.2V @ 250µA | 227 nC @ 10 V | ±20V | 25000 pF @ 15 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
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BTS110NKSA1MOSFET N-CH 100V 10A TO220AB Infineon Technologies |
0 | - |
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规格书 |
TEMPFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | - | 200mOhm @ 5A, 10V | 3.5V @ 1mA | - | - | 600 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
