上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFH5010TR2PBFMOSFET N-CH 100V 13A 5X6 PQFN Infineon Technologies |
0 | - |
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规格书 |
- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 13A (Ta), 100A (Tc) | - | 9mOhm @ 50A, 10V | 4V @ 150µA | 98 nC @ 10 V | - | 4340 pF @ 25 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
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IRFH5025TR2PBFMOSFET N-CH 250V 3.8A PQFN Infineon Technologies |
0 | - |
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规格书 |
- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 3.8A (Ta) | - | 100mOhm @ 5.7A, 10V | 5V @ 150µA | 56 nC @ 10 V | - | 2150 pF @ 50 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
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IRFP044NMOSFET N-CH 55V 53A TO247AC Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-247-3 | Bag | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 53A (Tc) | 10V | 20mOhm @ 29A, 10V | 4V @ 250µA | 61 nC @ 10 V | ±20V | 1500 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IRFP3006PBFXKMA1TRENCH 40<-<100V Infineon Technologies |
0 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 8970 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IPC302N15N3X1SA1MOSFET N-CH 150V 1A SAWN ON FOIL Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 270µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
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IPC26N12NX1SA1MOSFET N-CH 120V 1A SAWN ON FOIL Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 244µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
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IPP020N08N5XKSA1TRENCH 40<-<100V Infineon Technologies |
0 | - |
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规格书 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.8V @ 280µA | 223 nC @ 10 V | ±20V | 16900 pF @ 40 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP100N10S305AKSA2MOSFET_(75V 120V( Infineon Technologies |
0 | - |
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规格书 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 5.1mOhm @ 100A, 10V | 4V @ 240µA | 176 nC @ 10 V | ±20V | 11570 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-1 |
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IRLH7134TR2PBFMOSFET N-CH 40V 26A 8PQFN Infineon Technologies |
0 | - |
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规格书 |
- | 8-PowerTDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 26A (Ta), 85A (Tc) | - | 3.3mOhm @ 50A, 10V | 2.5V @ 100µA | 58 nC @ 4.5 V | - | 3720 pF @ 25 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
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IRFH5025TRPBFMOSFET N-CH 250V 3.8A 8PQFN Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 3.8A (Ta) | 10V | 100mOhm @ 5.7A, 10V | 5V @ 150µA | 56 nC @ 10 V | ±20V | 2150 pF @ 50 V | - | 3.6W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
