制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IRF6729MTRPBFMOSFET N-CH 30V 31A DIRECTFET Infineon Technologies |
0 | - |
|
![]() 规格书 |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 31A (Ta), 190A (Tc) | 4.5V, 10V | 1.8mOhm @ 31A, 10V | 2.35V @ 150µA | 63 nC @ 4.5 V | ±20V | 6030 pF @ 15 V | - | 2.8W (Ta), 104W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
![]() |
IRFB4410MOSFET N-CH 100V 96A TO220AB Infineon Technologies |
0 | - |
|
![]() 规格书 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 96A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180 nC @ 10 V | ±20V | 5150 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
![]() |
94-4796MOSFET N-CH 55V 85A D2PAK Infineon Technologies |
0 | - |
|
![]() 规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
![]() |
IPC313N10N3RX1SA2TRENCH >=100V Infineon Technologies |
0 | - |
|
![]() 规格书 |
OptiMOS™ 3 | Die | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | - | 10V | 100mOhm @ 2A, 10V | 3.5V @ 275µA | - | - | - | - | - | - | - | - | Surface Mount | Die |
![]() |
IRFI1310NMOSFET N-CH 100V 24A TO220AB FP Infineon Technologies |
0 | - |
|
![]() 规格书 |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 24A (Tc) | 10V | 36mOhm @ 13A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
![]() |
IPL65R065CFD7AUMA1HIGH POWER_NEW Infineon Technologies |
0 | - |
|
![]() 规格书 |
CoolMOS™ CFD7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 65mOhm @ 16.4A, 10V | 4.5V @ 860µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 195W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4-1 |
![]() |
IPB048N06LGATMA1MOSFET N-CH 60V 100A D2PAK Infineon Technologies |
0 | - |
|
![]() 规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 4.4mOhm @ 100A, 10V | 2V @ 270µA | 225 nC @ 10 V | ±20V | 7600 pF @ 30 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
![]() |
IPB050N06NGATMA1MOSFET N-CH 60V 100A D2PAK Infineon Technologies |
0 | - |
|
![]() 规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 4.7mOhm @ 100A, 10V | 4V @ 270µA | 167 nC @ 10 V | ±20V | 6100 pF @ 30 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
![]() |
IRFH5015TR2PBFMOSFET N-CH 150V 10A 8VQFN Infineon Technologies |
0 | - |
|
![]() 规格书 |
- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 10A (Ta), 56A (Tc) | - | 31mOhm @ 34A, 10V | 5V @ 150µA | 50 nC @ 10 V | - | 2300 pF @ 50 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
![]() |
IRFH5020TR2PBFMOSFET N-CH 200V 5.1A 8PQFN Infineon Technologies |
0 | - |
|
![]() 规格书 |
- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.1A (Ta) | - | 55mOhm @ 7.5A, 10V | 5V @ 150µA | 54 nC @ 10 V | - | 2290 pF @ 100 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |