上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSB280N15NZ3GXUMA1MOSFET N-CH 150V 9A/30A 2WDSON Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 9A (Ta), 30A (Tc) | 10V | 28mOhm @ 30A, 10V | 4V @ 60µA | 21 nC @ 10 V | ±20V | 1600 pF @ 75 V | - | 2.8W (Ta), 57W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
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IGT60R190D1ATMA1GAN HV Infineon Technologies |
0 | - |
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- |
- | - | Tape & Reel (TR) | Last Time Buy | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IGLD60R190D1SAUMA1GAN HV PG-LSON-8 Infineon Technologies |
0 | - |
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- |
CoolGaN™ | 8-LDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 600 V | 10A (Tc) | - | - | 1.6V @ 960µA | - | -10V | 157 pF @ 400 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-LSON-8-1 |
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IPI051N15N5AKSA1MV POWER MOS Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ 5 | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 120A (Tc) | 8V, 10V | 5.1mOhm @ 60A, 10V | 4.6V @ 264µA | 100 nC @ 10 V | ±20V | 7800 pF @ 75 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
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IPW60R125CPFKSA1MOSFET N-CH 600V 25A TO247-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 125mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70 nC @ 10 V | ±20V | 2500 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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SPB07N60S5ATMA1MOSFET N-CH 600V 7.3A TO263-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 5.5V @ 350µA | 35 nC @ 10 V | ±20V | 970 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IRFB3307MOSFET N-CH 75V 130A TO220AB Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 130A (Tc) | 10V | 6.3mOhm @ 75A, 10V | 4V @ 150µA | 180 nC @ 10 V | ±20V | 5150 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFP460APBFXKMA1PLANAR >= 100V Infineon Technologies |
0 | - |
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- |
- | - | Tube | Not For New Designs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SPW24N60CFDFKSA1MOSFET N-CH 650V 21.7A TO247-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 21.7A (Tc) | 10V | 185mOhm @ 15.4A, 10V | 5V @ 1.2mA | 143 nC @ 10 V | ±20V | 3160 pF @ 25 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IRFH5006TR2PBFMOSFET N-CH 60V 100A 5X6 PQFN Infineon Technologies |
0 | - |
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规格书 |
- | 8-PowerTDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 21A (Ta), 100A (Tc) | - | 4.1mOhm @ 50A, 10V | 4V @ 150µA | 100 nC @ 10 V | - | 4175 pF @ 30 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
