上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ISC16DP15LMATMA1TRENCH >=100V Infineon Technologies |
4,388 | - |
|
规格书 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SPA11N65C3XKSA1MOSFET N-CH 650V 11A TO220-FP Infineon Technologies |
611 | - |
|
规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
|
|
IPB015N06NF2SATMA1TRENCH 40<-<100V Infineon Technologies |
654 | - |
|
规格书 |
StrongIRFET™2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 37A (Ta), 195A (Tc) | 6V, 10V | 1.5mOhm @ 100A, 10V | 3.3V @ 186µA | 233 nC @ 10 V | ±20V | 10500 pF @ 30 V | - | 3.8W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPD60R170CFD7ATMA1MOSFET N-CH 600V 14A TO252-3 Infineon Technologies |
105 | - |
|
规格书 |
CoolMOS™ CFD7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 10V | 170mOhm @ 6A, 10V | 4.5V @ 300µA | 28 nC @ 10 V | ±20V | 1199 pF @ 400 V | - | 76W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IAUA250N04S6N007EAUMA1MOSFET_(20V 40V) Infineon Technologies |
2,411 | - |
|
规格书 |
- | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 435A (Tj) | 7V, 10V | 0.7mOhm @ 100A, 10V | 3V @ 130µA | 151 nC @ 10 V | ±20V | 9898 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-5-4 |
|
IPA65R280E6XKSA1MOSFET N-CH 650V 13.8A TO220-FP Infineon Technologies |
348 | - |
|
规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IRFS7434TRLPBFMOSFET N-CH 40V 195A D2PAK Infineon Technologies |
2,549 | - |
|
规格书 |
HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324 nC @ 10 V | ±20V | 10820 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRF3808PBFMOSFET N-CH 75V 140A TO220AB Infineon Technologies |
1,240 | - |
|
规格书 |
HEXFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 140A (Tc) | 10V | 7mOhm @ 82A, 10V | 4V @ 250µA | 220 nC @ 10 V | ±20V | 5310 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IPP057N08N3GXKSA1MOSFET N-CH 80V 80A TO220-3 Infineon Technologies |
1,107 | - |
|
规格书 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 6V, 10V | 5.7mOhm @ 80A, 10V | 3.5V @ 90µA | 69 nC @ 10 V | ±20V | 4750 pF @ 40 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
IPP60R299CPXKSA1MOSFET N-CH 650V 11A TO220-3 Infineon Technologies |
782 | - |
|
规格书 |
CoolMOS™ | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
