上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPD60R280P7ATMA1MOSFET N-CH 600V 12A TO252-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ P7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18 nC @ 10 V | ±20V | 761 pF @ 400 V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPW60R125P6XKSA1MOSFET N-CH 600V 30A TO247-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ P6 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 11.6A, 10V | 4.5V @ 960µA | 56 nC @ 10 V | ±20V | 2660 pF @ 100 V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
|
IPLK80R600P7ATMA1MOSFET 800V TDSON-8 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ P7 | 8-PowerTDFN | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | 800 V | - | - | - | - | - | ±20V | - | - | - | - | - | - | Surface Mount | PG-TDSON-8 |
|
IPP60R099P6XKSA1MOSFET N-CH 600V 37.9A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ P6 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 37.9A (Tc) | 10V | 99mOhm @ 14.5A, 10V | 4.5V @ 1.21mA | 70 nC @ 10 V | ±20V | 3330 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
IPW60R099C7XKSA1MOSFET N-CH 600V 14A TO247-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ C7 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4V @ 490µA | 42 nC @ 10 V | ±20V | 1819 pF @ 400 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
|
|
SPP15P10PLHXKSA1MOSFET P-CH 100V 15A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
SIPMOS® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 4.5V, 10V | 200mOhm @ 11.3A, 10V | 2V @ 1.54mA | 62 nC @ 10 V | ±20V | 1490 pF @ 25 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
IPP028N08N3GXKSA1MOSFET N-CH 80V 100A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 2.8mOhm @ 100A, 10V | 3.5V @ 270µA | 206 nC @ 10 V | ±20V | 14200 pF @ 40 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IAUC120N04S6N009ATMA1MOSFET N-CH 40V 120A 8TDSON-33 Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 7V, 10V | 0.9mOhm @ 60A, 10V | 3.4V @ 90µA | 115 nC @ 10 V | ±20V | 7360 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-33 |
|
|
IPP65R110CFDAAKSA1MOSFET N-CH 650V 31.2A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | ±20V | 3240 pF @ 100 V | - | 277.8W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3 |
|
IRL3705NSTRLPBFMOSFET N-CH 55V 89A D2PAK Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 89A (Tc) | 4V, 10V | 10mOhm @ 46A, 10V | 2V @ 250µA | 98 nC @ 5 V | ±16V | 3600 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
