上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD80R4K5P7ATMA1MOSFET N-CH 800V 1.5A TO252 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.5A (Tc) | 10V | 4.5Ohm @ 400mA, 10V | 3.5V @ 200µA | 4 nC @ 10 V | ±20V | 80 pF @ 500 V | - | 13W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPP023N04NGXKSA1MOSFET N-CH 40V 90A TO220-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 2.3mOhm @ 90A, 10V | 4V @ 95µA | 120 nC @ 10 V | ±20V | 10000 pF @ 20 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPAN80R360P7XKSA1MOSFET N-CH 800V 13A TO220 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 3.5V @ 280µA | 30 nC @ 10 V | ±20V | 930 pF @ 500 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPA65R190C7XKSA1MOSFET N-CH 650V 8A TO220-FP Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ C7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 8A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23 nC @ 10 V | ±20V | 1150 pF @ 400 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPA032N06N3GXKSA1MOSFET N-CH 60V 84A TO220-3-31 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 84A (Tc) | 10V | 3.2mOhm @ 80A, 10V | 4V @ 118µA | 165 nC @ 10 V | ±20V | 13000 pF @ 30 V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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IPD90N04S4L04ATMA1MOSFET N-CH 40V 90A TO252-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 4.5V, 10V | 3.8mOhm @ 90A, 10V | 2.2V @ 35µA | 60 nC @ 10 V | +20V, -16V | 4690 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-313 |
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IPI024N06N3GXKSA1MOSFET N-CH 60V 120A TO262-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 196µA | 275 nC @ 10 V | ±20V | 23000 pF @ 30 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
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IPLK70R750P7ATMA1MOSFET N-CH 700V TDSON-8 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ P7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TDSON-8 |
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IPA80R310CEXKSA2MOSFET N-CH 800V 16.7A TO220-FP Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 16.7A (Tc) | 10V | 310mOhm @ 11A, 10V | 3.9V @ 1mA | 91 nC @ 10 V | ±20V | 2320 pF @ 100 V | - | 35W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPLK80R2K0P7ATMA1MOSFET 800V TDSON-8 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ P7 | 8-PowerTDFN | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | 800 V | - | - | - | - | - | ±20V | - | - | - | - | - | - | Surface Mount | PG-TDSON-8 |
