制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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IPA50R140CPXKSA1MOSFET N-CH 500V 23A TO220-FP Infineon Technologies |
0 | - |
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![]() 规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 23A (Tc) | 10V | 140mOhm @ 14A, 10V | 3.5V @ 930µA | 64 nC @ 10 V | ±20V | 2540 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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BSC019N04NSGATMA1MOSFET N-CH 40V 30A/100A TDSON Infineon Technologies |
0 | - |
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![]() 规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 30A (Ta), 100A (Tc) | 10V | 1.9mOhm @ 50A, 10V | 4V @ 85µA | 108 nC @ 10 V | ±20V | 8800 pF @ 20 V | - | 2.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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IPLK80R900P7ATMA1MOSFET 800V TDSON-8 Infineon Technologies |
0 | - |
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![]() 规格书 |
CoolMOS™ P7 | 8-PowerTDFN | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | 800 V | - | - | - | - | - | ±20V | - | - | - | - | - | - | Surface Mount | PG-TDSON-8 |
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IPA60R600P7XKSA1MOSFET N-CH 600V 6A TO220 Infineon Technologies |
1 | - |
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![]() 规格书 |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9 nC @ 10 V | ±20V | 363 pF @ 400 V | - | 21W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPD95R1K2P7ATMA1MOSFET N-CH 950V 6A TO252-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
CoolMOS™ P7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 6A (Tc) | 10V | 1.2Ohm @ 2.7A, 10V | 3.5V @ 140µA | 15 nC @ 10 V | ±20V | 478 pF @ 400 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPW65R190CFD7AXKSA1MOSFET N-CH 650V 14A TO247-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 14A (Tc) | - | 190mOhm @ 6.4A, 10V | 4.5V @ 320µA | 28 nC @ 10 V | ±20V | 1291 pF @ 400 V | - | 77W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3 |
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IPW60R120P7XKSA1MOSFET N-CH 600V 26A TO247-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
CoolMOS™ P7 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 26A (Tc) | 10V | 120mOhm @ 8.2A, 10V | 4V @ 410µA | 36 nC @ 10 V | ±20V | 1544 pF @ 400 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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IPD052N10NF2SATMA1MOSFET Infineon Technologies |
0 | - |
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StrongIRFET™ 2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Ta), 118A (Tc) | 6V, 10V | 5.2mOhm @ 70A, 10V | 3.8V @ 84µA | 76 nC @ 10 V | ±20V | 3600 pF @ 50 V | - | 3W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPW65R145CFD7AXKSA1MOSFET N-CH 650V 17A TO247-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17A (Tc) | - | 145mOhm @ 8.5A, 10V | 4.5V @ 420µA | 36 nC @ 10 V | ±20V | 1694 pF @ 400 V | - | 98W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3 |
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IPP60R099C7XKSA1MOSFET N-CH 600V 22A TO220-3 Infineon Technologies |
0 | - |
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CoolMOS™ C7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4V @ 490µA | 42 nC @ 10 V | ±20V | 1819 pF @ 400 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |