制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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IPLK80R1K4P7ATMA1MOSFET 800V TDSON-8 Infineon Technologies |
0 | - |
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![]() 规格书 |
CoolMOS™ P7 | 8-PowerTDFN | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | 800 V | - | - | - | - | - | ±20V | - | - | - | - | - | - | Surface Mount | PG-TDSON-8 |
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BSZ0902NSIATMA1MOSFET N-CH 30V 21A/40A TSDSON Infineon Technologies |
0 | - |
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![]() 规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 40A (Tc) | 4.5V, 10V | 2.8mOhm @ 30A, 10V | 2V @ 250µA | 24 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 2.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL |
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IPA50R380CEXKSA2MOSFET N-CH 500V 6.3A TO220 Infineon Technologies |
1 | - |
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![]() 规格书 |
CoolMOS™ CE | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 6.3A (Tc) | 13V | 380mOhm @ 3.2A, 13V | 3.5V @ 260µA | 24.8 nC @ 10 V | ±20V | 584 pF @ 100 V | - | 29.2W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-FP |
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IPP65R150CFDXKSA2MOSFET N-CH 650V 22.4A TO220-3 Infineon Technologies |
0 | - |
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CoolMOS™ CFD2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPB090N06N3GATMA1MOSFET N-CH 60V 50A D2PAK Infineon Technologies |
0 | - |
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![]() 规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 9mOhm @ 50A, 10V | 4V @ 34µA | 36 nC @ 10 V | ±20V | 2900 pF @ 30 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPLK80R1K2P7ATMA1MOSFET 800V TDSON-8 Infineon Technologies |
0 | - |
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![]() 规格书 |
CoolMOS™ P7 | 8-PowerTDFN | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | 800 V | - | - | - | - | - | ±20V | - | - | - | - | - | - | Surface Mount | PG-TDSON-8 |
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IPA60R125P6XKSA1MOSFET N-CH 600V 30A TO220-FP Infineon Technologies |
0 | - |
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CoolMOS™ P6 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 11.6A, 10V | 4.5V @ 960µA | 56 nC @ 10 V | ±20V | 2660 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPP60R125P6XKSA1MOSFET N-CH 600V 30A TO220-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
CoolMOS™ P6 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 11.6A, 10V | 4.5V @ 960µA | 56 nC @ 10 V | ±20V | 2660 pF @ 100 V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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BSC025N03MSGATMA1MOSFET N-CH 30V 100A TDSON-8 Infineon Technologies |
0 | - |
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![]() 规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Ta). 100A (Tc) | 4.5V, 10V | 2.5mOhm @ 30A, 10V | 2V @ 250µA | 98 nC @ 10 V | ±20V | 7600 pF @ 15 V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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IPL60R650P6SATMA1MOSFET N-CH 600V 6.7A 8THINPAK Infineon Technologies |
0 | - |
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CoolMOS™ P6 | 8-PowerTDFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.7A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12 nC @ 10 V | ±20V | 557 pF @ 100 V | - | 56.8W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 8-ThinPak (5x6) |