上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BUZ73AINN-CHANNEL POWER MOSFET Infineon Technologies |
966 | - |
|
规格书 |
SIPMOS® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IPP230N06L3GXKSA1N-CHANNEL POWER MOSFET Infineon Technologies |
1,000 | - |
|
规格书 |
OptiMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A | 4.5V, 10V | 23mOhm @ 30A, 10V | 2.2V @ 11µA | 7 nC @ 4.5 V | ±20V | 1200 pF @ 30 V | - | 36W | -55°C ~ 175°C | - | - | Through Hole | PG-TO220-3 |
|
SPB10N10LGN-CHANNEL POWER MOSFET Infineon Technologies |
993 | - |
|
- |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10.3A (Tc) | 10V | 154mOhm @ 8.1A, 10V | 2V @ 21µA | 22 nC @ 10 V | ±20V | 444 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
SPS02N60C3MOSFET N-CH 650V 1.8A TO251-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-11 |
|
IPI80N04S3-06N-CHANNEL POWER MOSFET Infineon Technologies |
1,000 | - |
|
规格书 |
* | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SPB03N60S5N-CHANNEL POWER MOSFET Infineon Technologies |
1,000 | - |
|
规格书 |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 5.5V @ 135µA | 16 nC @ 10 V | ±20V | 420 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPF13N03LA GMOSFET N-CH 25V 30A TO252-3 Infineon Technologies |
444 | - |
|
规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 30A (Tc) | 4.5V, 10V | 12.8mOhm @ 30A, 10V | 2V @ 20µA | 8.3 nC @ 5 V | ±20V | 1043 pF @ 15 V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-23 |
|
IPI04N03LAMOSFET N-CH 25V 80A TO262-3 Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 80A (Tc) | 4.5V, 10V | 4.2mOhm @ 55A, 10V | 2V @ 60µA | 32 nC @ 5 V | ±20V | 3877 pF @ 15 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
IRFH7110TRPBFMOSFET N-CH 100V 11A/58A 8PQFN Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | 8-TQFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Ta), 58A (Tc) | 10V | 13.5mOhm @ 35A, 10V | 4V @ 100µA | 87 nC @ 10 V | ±20V | 3240 pF @ 25 V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
SPU30P06PMOSFET P-CH 60V 30A TO251-3 Infineon Technologies |
0 | - |
|
规格书 |
SIPMOS® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 10V | 75mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48 nC @ 10 V | ±20V | 1535 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO251-3 |
