上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP65R099CFD7AAKSA1MOSFET N-CH 650V 24A TO220-3 Infineon Technologies |
38 | - |
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规格书 |
CoolMOS™ CFD7A | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 99mOhm @ 12.5A, 10V | 4.5V @ 630µA | 53 nC @ 10 V | ±20V | 2513 pF @ 400 V | - | 127W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3 |
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IPW60R055CFD7XKSA1MOSFET N-CH 600V 38A TO247-3 Infineon Technologies |
73 | - |
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规格书 |
OptiMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | 10V | 55mOhm @ 18A, 10V | 4.5V @ 900µA | 79 nC @ 10 V | ±20V | 3194 pF @ 400 V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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IMZA65R083M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies |
28 | - |
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规格书 |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 26A (Tc) | 18V | 111mOhm @ 11.2A, 18V | 5.7V @ 3.3mA | 19 nC @ 18 V | +20V, -2V | 624 pF @ 400 V | - | 104W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-3 |
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IMW65R057M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies |
84 | - |
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规格书 |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 35A (Tc) | 18V | 74mOhm @ 16.7A, 18V | 5.7V @ 5mA | 28 nC @ 18 V | +20V, -2V | 930 pF @ 400 V | - | 133W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-41 |
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IPWS65R050CFD7AXKSA1MOSFET N-CH 650V 45A TO247-3-41 Infineon Technologies |
55 | - |
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规格书 |
CoolMOS™ CFD7A | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 10V | 50mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3-41 |
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IPA65R045C7XKSA1MOSFET N-CH 650V 18A TO220-FP Infineon Technologies |
8 | - |
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规格书 |
CoolMOS™ C7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 18A (Tc) | 10V | 45mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93 nC @ 10 V | ±20V | 4340 pF @ 400 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IAUCN04S7L028ATMA1MOSFET_(20V 40V) Infineon Technologies |
363 | - |
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规格书 |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A | 10V | - | - | - | - | - | - | - | -55°C ~ 175°C | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-33 |
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IAUCN04S7L019ATMA1MOSFET_(20V 40V) Infineon Technologies |
698 | - |
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规格书 |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | - | 10V | - | - | 40 nC @ 10 V | - | - | - | - | -55°C ~ 175°C | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-33 |
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IAUCN04S7N020ATMA1MOSFET_(20V 40V) Infineon Technologies |
340 | - |
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规格书 |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | - | 10V | - | - | 24 nC @ 10 V | - | - | - | - | -55°C ~ 175°C | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-33 |
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IAUCN04S7L053DATMA1MOSFET_(20V 40V) Infineon Technologies |
500 | - |
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- |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
