上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IMZC120R078M2HXKSA1IMZC120R078M2HXKSA1 Infineon Technologies |
90 | - |
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规格书 |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 28A (Tc) | 15V, 18V | 78mOhm @ 9A, 18V | 5.1V @ 2.8mA | 21 nC @ 18 V | +23V, -7V | 700 pF @ 800 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
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IPQC60T040S7AXTMA1AUTOMOTIVE_COOLMOS Infineon Technologies |
75 | - |
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- |
CoolMOS™ | 22-PowerBSOP Module | Box | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 54A (Tc) | 12V | 40mOhm @ 13A, 12V | 4.5V @ 780µA | 83 nC @ 12 V | ±20V | 3128 pF @ 300 V | - | 272W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
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AIMZH120R080M1TXKSA1SIC_DISCRETE Infineon Technologies |
17 | - |
|
规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 18V, 20V | 100mOhm @ 10A, 20V | 5.1V @ 3.3mA | 24 nC @ 20 V | +23V, -5V | 671 pF @ 800 V | - | 169W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-11 |
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IPDQ60T022S7XTMA1HIGH POWER_NEW Infineon Technologies |
100 | - |
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规格书 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPP60R016CM8XKSA1IPP60R016CM8XKSA1 Infineon Technologies |
23 | - |
|
- |
CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 135A (Tc) | 10V | 16mOhm @ 62.5A, 10V | 4.7V @ 1.48mA | 171 nC @ 10 V | ±20V | 7545 pF @ 400 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPQC60T022S7AXTMA1AUTOMOTIVE_COOLMOS Infineon Technologies |
100 | - |
|
规格书 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPDQ60T022S7AXTMA1AUTOMOTIVE_COOLMOS Infineon Technologies |
100 | - |
|
规格书 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AIMCQ120R040M1TXTMA1SIC_DISCRETE Infineon Technologies |
90 | - |
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- |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 61A (Tc) | 18V, 20V | 50mOhm @ 20A, 20V | 5.1V @ 6.4mA | 43 nC @ 20 V | +25V, -10V | 1264 pF @ 800 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
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IPQC60T017S7XTMA1HIGH POWER_NEW Infineon Technologies |
100 | - |
|
规格书 |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 113A (Tc) | 12V | 17mOhm @ 29A, 12V | 4.5V @ 1.88mA | 196 nC @ 12 V | ±20V | 7370 pF @ 300 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
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IPDQ60T017S7XTMA1HIGH POWER_NEW Infineon Technologies |
68 | - |
|
规格书 |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 113A (Tc) | 12V | 17mOhm @ 29A, 12V | 4.5V @ 1.88mA | 196 nC @ 12 V | ±20V | 7370 pF @ 300 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
