场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    MSCSM70TAM10TPAG

    MSCSM70TAM10TPAG

    MOSFET 6N-CH 700V 238A

    Microchip Technology

    0
    MSCSM70TAM10TPAG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 700V 238A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 674W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70AM025T6AG

    MSCSM70AM025T6AG

    MOSFET 2N-CH 700V 689A

    Microchip Technology

    0
    MSCSM70AM025T6AG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA 1290nC @ 20V 27000pF @ 700V 1.882kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70HM05AG

    MSCSM70HM05AG

    MOSFET 4N-CH 700V 349A

    Microchip Technology

    0
    MSCSM70HM05AG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 700V 349A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 966W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70AM025D3AG

    MSCSM70AM025D3AG

    MOSFET 2N-CH 700V 689A

    Microchip Technology

    0
    MSCSM70AM025D3AG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA 1290nC @ 20V 27000pF @ 700V 1.882kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120TAM16TPAG

    MSCSM120TAM16TPAG

    MOSFET 6N-CH 1200V 171A

    Microchip Technology

    0
    MSCSM120TAM16TPAG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 171A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 728W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120HM083AG

    MSCSM120HM083AG

    MOSFET 4N-CH 1200V 251A

    Microchip Technology

    0
    MSCSM120HM083AG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9000pF @ 1000V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70AM025T6LIAG

    MSCSM70AM025T6LIAG

    MOSFET 2N-CH 700V 689A

    Microchip Technology

    0
    MSCSM70AM025T6LIAG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA 1290nC @ 20V 27000pF @ 700V 1.882kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70VR1M03CT6AG

    MSCSM70VR1M03CT6AG

    MOSFET 2N-CH 700V 585A

    Microchip Technology

    0
    MSCSM70VR1M03CT6AG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 585A (Tc) 3.8mOhm @ 200A, 20V 2.4V @ 20mA 1075nC @ 20V 22500pF @ 700V 1.625kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM042D3AG

    MSCSM120AM042D3AG

    MOSFET 2N-CH 1200V 495A

    Microchip Technology

    0
    MSCSM120AM042D3AG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 18mA 1392nC @ 20V 18100pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM042T6LIAG

    MSCSM120AM042T6LIAG

    MOSFET 2N-CH 1200V 495A

    Microchip Technology

    0
    MSCSM120AM042T6LIAG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 18mA 1392nC @ 20V 18100pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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