场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    MSCSM120AM50T1AG

    MSCSM120AM50T1AG

    MOSFET 2N-CH 1200V 55A

    Microchip Technology

    0
    MSCSM120AM50T1AG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 1mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120HRM052NG

    MSCSM120HRM052NG

    MOSFET 4N-CH 1200V/700V 472A

    Microchip Technology

    0
    MSCSM120HRM052NG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 472A (Tc), 442A (Tc) 5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V 2.8V @ 18mA, 2.4V @ 16mA 1392nC @ 20V, 860nC @ 20V 18100pF @ 1000V, 18000pF @ 700V 1.846kW (Tc), 1.161kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    LP1030DK1-G

    LP1030DK1-G

    MOSFET 2P-CH 300V SOT23-5

    Microchip Technology

    0
    LP1030DK1-G

    规格书

    - SC-74A, SOT-753 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 300V - 180Ohm @ 20mA, 7V 2.4V @ 1mA - 10.8pF @ 25V - -25°C ~ 125°C (TJ) - - Surface Mount SOT-23-5
    LN100LA-G

    LN100LA-G

    MOSFET 2N-CH 1200V 6LFGA

    Microchip Technology

    0
    LN100LA-G

    规格书

    - 6-VFLGA Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Cascoded) - 1200V (1.2kV) - 3000Ohm @ 2mA, 2.8V 1.6V @ 10µA - 50pF @ 25V 350mW -25°C ~ 125°C (TJ) - - Surface Mount 6-LFGA (3x3)
    TC6321T-V/9U

    TC6321T-V/9U

    MOSFET N/P-CH 200V 2A 8VDFN

    Microchip Technology

    0
    TC6321T-V/9U

    规格书

    - 8-VDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 200V 2A (Ta) 7Ohm @ 1A, 10V, 8Ohm @ 1A, 10V 2V @ 1mA, 2.4V @ 1mA - 110pF @ 25V, 200pF @ 25V - -55°C ~ 175°C - - Surface Mount 8-VDFN (6x5)
    TC8020K6-G-M937

    TC8020K6-G-M937

    MOSFET 6N/6P-CH 200V 56QFN

    Microchip Technology

    0
    TC8020K6-G-M937

    规格书

    - 56-VFQFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 6 N and 6 P-Channel - 200V - 8Ohm @ 1A, 10V 2.4V @ 1mA - 50pF @ 25V - -55°C ~ 150°C (TJ) - - Surface Mount 56-QFN (8x8)
    APTC60DDAM70T1G

    APTC60DDAM70T1G

    MOSFET 2N-CH 600V 39A SP1

    Microchip Technology

    0
    APTC60DDAM70T1G

    规格书

    CoolMOS™ SP1 Tray Active MOSFET (Metal Oxide) 2 N Channel (Dual Buck Chopper) - 600V 39A 70mOhm @ 39A, 10V 3.9V @ 2.7mA 259nC @ 10V 7000pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTC80H29T3G

    APTC80H29T3G

    MOSFET 4N-CH 800V 15A SP3

    Microchip Technology

    0
    APTC80H29T3G

    规格书

    - SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 800V 15A 290mOhm @ 7.5A, 10V 3.9V @ 1mA 90nC @ 10V 2254pF @ 25V 156W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    APTM10DSKM19T3G

    APTM10DSKM19T3G

    MOSFET 2N-CH 100V 70A SP3

    Microchip Technology

    0
    APTM10DSKM19T3G

    规格书

    - SP3 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 70A 21mOhm @ 35A, 10V 4V @ 1mA 200nC @ 10V 5100pF @ 25V 208W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    APTM50H15FT1G

    APTM50H15FT1G

    MOSFET 4N-CH 500V 25A SP1

    Microchip Technology

    0
    APTM50H15FT1G

    规格书

    - SP1 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 500V 25A 180mOhm @ 21A, 10V 5V @ 1mA 170nC @ 10V 5448pF @ 25V 208W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
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