图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | FET 特性 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 输入电容 (Ciss)(最大值)@ Vds | 功率 - 最大值 | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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MSCSM120DDUM31TBL2NGMOSFET 4N-CH 1200V 79A Microchip Technology |
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![]() 规格书 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel, Common Source | - | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120VR1M16CT3AGMOSFET 2N-CH 1200V 173A Microchip Technology |
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![]() 规格书 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 173A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 464nC @ 20V | 6040pF @ 1000V | 745W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120HM31CTBL2NGMOSFET 4N-CH 1200V 79A Microchip Technology |
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![]() 规格书 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120DDUM31CTBL2NGMOSFET 4N-CH 1200V 79A Microchip Technology |
0 |
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![]() 规格书 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel, Common Source | - | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120TAM31T3AGMOSFET 6N-CH 1200V 89A Microchip Technology |
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![]() 规格书 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120AM11T3AGMOSFET 2N-CH 1200V 254A Microchip Technology |
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![]() 规格书 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 254A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 9mA | 696nC @ 20V | 9060pF @ 1000V | 1.067kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120HM16T3AGMOSFET 4N-CH 1200V 173A Microchip Technology |
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![]() 规格书 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 173A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 464nC @ 20V | 6040pF @ 1000V | 745W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120AM08T3AGMOSFET 2N-CH 1200V 337A Microchip Technology |
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![]() 规格书 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 337A (Tc) | 7.8mOhm @ 160A, 20V | 2.8V @ 12mA | 928nC @ 20V | 12100pF @ 1000V | 1.409kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM70VR1M07CT6AGMOSFET 2N-CH 700V 349A Microchip Technology |
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![]() 规格书 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 700V | 349A (Tc) | 6.4mOhm @ 120A, 20V | 2.4V @ 12mA | 645nC @ 20V | 13500pF @ 700V | 966W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120VR1M11CT6AGMOSFET 2N-CH 1200V 251A Microchip Technology |
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![]() 规格书 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 251A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 9mA | 696nC @ 20V | 9000pF @ 1000V | 1.042kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |