场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    MSCSM170HRM075NG

    MSCSM170HRM075NG

    MOSFET 4N-CH 1700V/1200V 337A

    Microchip Technology

    7
    MSCSM170HRM075NG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 337A (Tc), 317A (Tc) 7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V 3.2V @ 15mA, 2.8V @ 12mA 1068nC @ 20V, 928nC @ 20V 19800pF @ 1000V, 12100pF @ 1000V 1.492kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCM20XM16F4G

    MSCM20XM16F4G

    MOSFET 200V 77A SP4

    Microchip Technology

    6
    MSCM20XM16F4G

    规格书

    - Module Tube Active - - - 200V 77A (Tc) - - - - - - - - Chassis Mount SP4
    MSCSM120TLM31C3AG

    MSCSM120TLM31C3AG

    MOSFET 4N-CH 1200V 89A SP3F

    Microchip Technology

    4

    -

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    APTMC120AM25CT3AG

    APTMC120AM25CT3AG

    MOSFET 2N-CH 1200V 113A SP3

    Microchip Technology

    7
    APTMC120AM25CT3AG

    规格书

    - SP3 Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 113A (Tc) 25mOhm @ 80A, 20V 2.2V @ 4mA (Typ) 197nC @ 20V 3800pF @ 1000V 500W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    MSCSM120TLM16C3AG

    MSCSM120TLM16C3AG

    MOSFET 4N-CH 1200V 173A SP3F

    Microchip Technology

    2

    -

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    MSCSM120DDUM16CTBL3NG

    MSCSM120DDUM16CTBL3NG

    MOSFET 4N-CH 1200V 150A

    Microchip Technology

    6

    -

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70AM025CD3AG

    MSCSM70AM025CD3AG

    SIC 700V 538A D3

    Microchip Technology

    4
    MSCSM70AM025CD3AG

    规格书

    - Module Box Active Silicon Carbide (SiC) - - 700V 538A (Tc) - - - - - - - - Chassis Mount D3
    MSCSM70TAM19CT3AG

    MSCSM70TAM19CT3AG

    MOSFET 6N-CH 700V 124A SP3F

    Microchip Technology

    1
    MSCSM70TAM19CT3AG

    规格书

    - Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    MSCSM70DUM017AG

    MSCSM70DUM017AG

    MOSFET 2N-CH 700V 1021A

    Microchip Technology

    0

    -

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 700V 1021A (Tc) 2.1mOhm @ 360A, 20V 2.4V @ 36mA 1935nC @ 20V 40500pF @ 700V 2750W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM170AM058CT6LIAG

    MSCSM170AM058CT6LIAG

    MOSFET 2N-CH 1700V 353A

    Microchip Technology

    0
    MSCSM170AM058CT6LIAG

    规格书

    - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 353A (Tc) 7.5mOhm @ 180A, 20V 3.3V @ 15mA 1068nC @ 20V 19800pF @ 1000V 1.642kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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