上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFN120N20MOSFET N-CH 200V 120A SOT-227B IXYS |
0 | - |
|
规格书 |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 200 V | 120A (Tc) | 10V | 17mOhm @ 500mA, 10V | 4V @ 8mA | 360 nC @ 10 V | ±20V | 9100 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
MKE38RK600DFEL-TUBMOSFET N-CH 600V 50A SMPD IXYS |
0 | - |
|
规格书 |
CoolMOS™ | 9-SMD Module | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190 nC @ 10 V | ±20V | 6800 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | ISOPLUS-SMPD™.B |
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IXFN70N60Q2MOSFET N-CH 600V 70A SOT-227B IXYS |
0 | - |
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规格书 |
HiPerFET™, Q2 Class | SOT-227-4, miniBLOC | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 80mOhm @ 35A, 10V | 5V @ 8mA | 265 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXTH20N50DMOSFET N-CH 500V 20A TO247 IXYS |
0 | - |
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规格书 |
Depletion | TO-247-3 | Tube | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 330mOhm @ 10A, 10V | - | 125 nC @ 10 V | ±30V | 2500 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
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IXTN660N04T4MOSFET N-CH 40V 660A SOT227B IXYS |
0 | - |
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规格书 |
Trench | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 660A (Tc) | 10V | 0.85mOhm @ 100A, 10V | 4V @ 250µA | 860 nC @ 10 V | ±15V | 44000 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFN32N120MOSFET N-CH 1200V 32A SOT-227B IXYS |
0 | - |
|
规格书 |
HiPerFET™ | SOT-227-4, miniBLOC | Box | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1200 V | 32A | - | 350mOhm @ 500mA, 10V | 5V @ 8mA | 400 nC @ 10 V | - | 15900 pF @ 25 V | - | - | - | - | - | Chassis Mount | SOT-227B |
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IXFE80N50MOSFET N-CH 500V 72A SOT-227B IXYS |
0 | - |
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- |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 72A (Tc) | 10V | 55mOhm @ 40A, 10V | 4.5V @ 8mA | 380 nC @ 10 V | ±20V | 9890 pF @ 25 V | - | 580W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFN30N110PMOSFET N-CH 1100V 25A SOT-227B IXYS |
0 | - |
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- |
HiPerFET™, Polar | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1100 V | 25A (Tc) | 10V | 360mOhm @ 15A, 10V | 6.5V @ 1mA | 235 nC @ 10 V | ±30V | 13600 pF @ 25 V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFE23N100MOSFET N-CH 1000V 21A SOT227B IXYS |
0 | - |
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- |
HiPerFET™ | SOT-227-4, miniBLOC | Box | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | 10V | 430mOhm @ 11.5A, 10V | 5V @ 8mA | 250 nC @ 10 V | ±20V | 7000 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFN50N80Q2MOSFET N-CH 800V 50A SOT-227B IXYS |
0 | - |
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规格书 |
HiPerFET™, Q2 Class | SOT-227-4, miniBLOC | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 800 V | 50A (Tc) | 10V | 160mOhm @ 500mA, 10V | 5.5V @ 8mA | 260 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
