上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTF6N200P3MOSFET N-CH 2000V 4A I4PAC IXYS |
0 | - |
|
规格书 |
Polar P3™ | ISOPLUSi5-PAK™ | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 2000 V | 4A (Tc) | 10V | 4.2Ohm @ 3A, 10V | 5V @ 250µA | 143 nC @ 10 V | ±20V | 3700 pF @ 25 V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS i4-PAC™ |
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IXFL40N110PMOSFET N-CH 1100V 21A ISOPLUS264 IXYS |
0 | - |
|
规格书 |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1100 V | 21A (Tc) | 10V | 280mOhm @ 20A, 10V | 6.5V @ 1mA | 310 nC @ 10 V | ±30V | 19000 pF @ 25 V | - | - | - | - | - | Through Hole | ISOPLUS264™ |
|
IXFN340N06MOSFET N-CH 60V 340A SOT-227B IXYS |
0 | - |
|
规格书 |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 340A (Tc) | 10V | 3mOhm @ 100A, 10V | 4V @ 8mA | 600 nC @ 10 V | ±20V | 16800 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFN72N55Q2MOSFET N-CH 550V 72A SOT-227B IXYS |
0 | - |
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- |
HiPerFET™, Q2 Class | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 72A (Tc) | 10V | 72mOhm @ 500mA, 10V | 5V @ 8mA | 258 nC @ 10 V | ±30V | 10500 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFE180N20MOSFET N-CH 200V 158A SOT227B IXYS |
0 | - |
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- |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 158A (Tc) | 10V | 12mOhm @ 500mA, 10V | 4V @ 8mA | 380 nC @ 10 V | ±20V | 14400 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXTN79N20MOSFET N-CH 200V 85A SOT227B IXYS |
0 | - |
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- |
- | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 85A (Tc) | - | - | 4V @ 20mA | - | - | - | - | 400W (Tc) | - | - | - | Chassis Mount | SOT-227B |
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IXFL44N80MOSFET N-CH 800V 44A ISOPLUS264 IXYS |
0 | - |
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- |
HiPerFET™ | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 44A (Tc) | 10V | 165mOhm @ 22A, 10V | 4V @ 8mA | 380 nC @ 10 V | ±20V | 10000 pF @ 25 V | - | 550W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS264™ |
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IXTZ550N055T2MOSFET N-CH 55V 550A DE475 IXYS |
0 | - |
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规格书 |
TrenchT2™ | 6-SMD, Flat Leads | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 550A (Tc) | 10V | 1mOhm @ 100A, 10V | 4V @ 250µA | 595 nC @ 10 V | ±20V | 40000 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DE475 |
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IXFN24N100FMOSFET N-CH 1000V 24A SOT227B IXYS |
0 | - |
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- |
HiPerRF™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 24A (Tc) | 10V | 390mOhm @ 12A, 10V | 5.5V @ 8mA | 195 nC @ 10 V | ±20V | 6600 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFN170N10MOSFET N-CH 100V 170A SOT-227B IXYS |
0 | - |
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规格书 |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 170A (Tc) | 10V | 10mOhm @ 500mA, 10V | 4V @ 8mA | 515 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
