上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQA18N50V2MOSFET N-CH 500V 20A TO3P Fairchild Semiconductor |
380 | - |
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规格书 |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 265mOhm @ 10A, 10V | 5V @ 250µA | 55 nC @ 10 V | ±30V | 3290 pF @ 25 V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
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FDP047N08-F10164A, 75V, N-CHANNEL, MOSFET Fairchild Semiconductor |
432 | - |
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规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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HUFA75852G3-F085N-CHANNEL, MOSFET Fairchild Semiconductor |
166 | - |
|
规格书 |
UltraFET™ | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 75A (Tc) | 10V | 16mOhm @ 75A, 10V | 4V @ 250µA | 480 nC @ 20 V | ±20V | 7690 pF @ 25 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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FDA20N50MOSFET N-CH 500V 22A TO3PN Fairchild Semiconductor |
78,050 | - |
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规格书 |
UniFET™ | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 22A (Tc) | - | 230mOhm @ 11A, 10V | 5V @ 250µA | 59.5 nC @ 10 V | - | 3120 pF @ 25 V | - | - | - | - | - | Through Hole | TO-3PN |
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FDAF75N28MOSFET N-CH 280V 46A TO3PF Fairchild Semiconductor |
1,291 | - |
|
规格书 |
UniFET™ | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 280 V | 46A (Tc) | 10V | 41mOhm @ 23A, 10V | 5V @ 250µA | 144 nC @ 10 V | ±30V | 6700 pF @ 25 V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PF |
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FQAF40N25MOSFET N-CH 250V 24A TO3PF Fairchild Semiconductor |
2,593 | - |
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规格书 |
QFET® | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 24A (Tc) | 10V | 70mOhm @ 12A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±30V | 4000 pF @ 25 V | - | 108W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PF |
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FQH90N10V2N-CHANNEL POWER MOSFET Fairchild Semiconductor |
370 | - |
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规格书 |
QFET® | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 105A (Tc) | 10V | 10mOhm @ 52.5A, 10V | 4V @ 250µA | 191 nC @ 10 V | ±30V | 6150 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
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FCP16N60NPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
1,656 | - |
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规格书 |
SupreMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 199mOhm @ 8A, 10V | 4V @ 250µA | 52.3 nC @ 10 V | ±30V | 2170 pF @ 100 V | - | 134.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FDP7045LN-CHANNEL POWER MOSFET Fairchild Semiconductor |
81,875 | - |
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规格书 |
PowerTrench® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tj) | 4.5V, 10V | 4.5mOhm @ 50A, 10V | 3V @ 250µA | 58 nC @ 5 V | ±20V | 4357 pF @ 15 V | - | 107W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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FDB6035LN-CHANNEL POWER MOSFET Fairchild Semiconductor |
800 | - |
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规格书 |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 58A (Tc) | 4.5V, 10V | 11mOhm @ 26A, 10V | 3V @ 250µA | 46 nC @ 10 V | ±20V | 1230 pF @ 15 V | - | 75W (Tc) | -65°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AB |
